Monolithically grown CSPbBr3 by chemical vapor deposition for Self-Powered photodetector

被引:5
|
作者
Perumalveeramalai, Chandrasekar [1 ,2 ,3 ]
Zheng, Jie [1 ,2 ]
Wang, Yang [1 ,2 ]
Guo, Honglian [1 ,2 ]
Pammi, S. V. N. [4 ]
Mudike, Ravi [1 ,2 ]
Li, Chuanbo [1 ,2 ]
机构
[1] Minzu Univ China, Sch Sci, Beijing 100081, Peoples R China
[2] Minzu Univ China, Optoelect Res Ctr, Beijing 100081, Peoples R China
[3] Madanapalle Inst Technol & Sci, Dept Phys, Madanapalle 517325, Andhra Prades, India
[4] SR Univ, Sch Sci & Humanities, Dept Phys, Warangal 506371, Telangana, India
基金
中国国家自然科学基金;
关键词
Perovskites; Photodetectors; Chemical vapor deposition; Planar devices; Vertical devices; PEROVSKITE SOLAR-CELL; HALIDE PEROVSKITES; SINGLE-CRYSTALS; EFFICIENT; FILMS; FABRICATION; ULTRAFAST; STABILITY;
D O I
10.1016/j.cej.2024.152213
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
The high-quality monolithic growth of perovskite films with larger grains on any substrate is a challenging task due to the instability of morphology, carrier mobility and chemical stability. In this work, we demonstrated the strategy to grow CsPbBr3 films with micron-sized grains along the (002) surface by chemical vapor deposition. The structural and optical characterizations have shown that the as-grown CsPbBr3 thin films are compact and packed without pin holes and have excellent optical quality for use in high-performance optoelectronic devices. The planar photodetector with the device configuration Ag/CsPbBr3/Ag shows a high photoresponsivity of 506.32 A/W and a specific detectivity of 8.29 x 1012 Jones at an incident light illumination of 22.3 mu W/cm2. On the other hand, the vertically stacked device with ITO/SnO2/CsPbBr3/CuSCN/Ag configuration exhibits a photoresponsivity of 10.13 A/W at 0.05 V bias and 96 mA/W under 0 V bias. Specifically, the response time of the device in planar geometry is 241/205 ms, while the vertically stacked device has a response time of 20.51/21 ms at 0.05 V bias and 20.51/30 ms at 0 V bias. The results provide a new strategy for the growth of high-quality perovskite thin films and their effective application for high-performance optoelectronic devices.
引用
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页数:12
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