Novel fast-switching P-poly trench collector reverse conducting IGBT with different N-buffer position

被引：1

作者：

Wang, Yuying ^{[1
]}

Zhang, Zhengyuan ^{[1
]}

Jian, Peng ^{[2
]}

Liao, Pengfei ^{[1
]}

Zhang, Aohang ^{[3
]}

Zhu, Kunfeng ^{[3
]}

Chen, Wensuo ^{[3
]}

机构：

[1] 24th Res Inst China Elect Technol Grp Corp, Chongqing 400060, Peoples R China

[2] Runxi Microelect Chongqing Co Ltd, Chongqing 400060, Peoples R China

[3] Chongqing Univ, Sch Elect Engn, Natl Key Lab Power Transmiss Equipment Technol, Chongqing 400044, Peoples R China

来源：

MICROELECTRONICS JOURNAL | 2024年 / 147卷

关键词：

Recovery performance; Reverse-conducting insulated gate bipolar; transistor (RC IGBT); Snapback-free; Turn-off loss; SNAPBACK-FREE;

D O I：

10.1016/j.mejo.2024.106190

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel fast-switching P-poly trench collector reverse-conducting insulated gate bipolar transistor (RC-IGBT) with different N-buffer position (DBP) is proposed and investigated. Firstly, the N-buffer on P-poly TrenchCollector (TC) not on P+ and N+ collector will unaffected realize snapback-free with and without interface charge exist in the forward conduction. Secondly, N-buffer on TC can keep the fast extraction channel to the N+ collector open all the time, so that the ultralow turn-off loss (EOFF) can be achieved in IGBT mode, and the reverse recovery charge (Qrr) can be reduced in diode mode. Thirdly, N-buffer on TC makes the electric field distribution more uniform during forward blocking, thus further improving the breakdown voltage (BV). Fourth, N-buffer on TC can also provide more electrons to reduce forward peak recovery voltage (VFRM) during diode forward recovery mode. Compared with PNTC RC-IGBT, the proposed RC-IGBT enjoys lager breakdown voltage, and can reduce VFRM by 83%, Qrr by 27%, and the EOFF by 36%.

引用

页数：7

共 32 条

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