Valley polarization and magnetic anisotropy of two-dimensional Ni2Cl3I3/MoSe2 heterostructures

被引:0
|
作者
Chen, Bo [1 ]
Zhou, Baozeng [1 ]
Wang, Xiaocha [1 ]
机构
[1] Tianjin Univ Technol, Sch Integrated Circuit Sci & Engn, Tianjin Key Lab Film Elect & Communicate Devices, Tianjin 300384, Peoples R China
关键词
INTRINSIC FERROMAGNETISM; STRAIN;
D O I
10.1039/d4nr01253d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Two-dimensional (2D) Janus trihalides have attracted widespread attention due to their potential applications in spintronics. In this work, the valley polarization of MoSe2 at the K ' and K points can be modulated by Ni2Cl3I3, a new 2D Janus trihalide. The Ni2Cl3I3/MoSe2 heterostructure has an in-plane magnetic anisotropy energy (IMA) and is characterized by three distinct electronic structures: metallic, semiconducting, and half-metallic. It is noted that the semiconducting state features a band gap of 0.07 eV. When spin-orbit coupling (SOC) is considered, valley polarization is exhibited in the Ni2Cl3I3/MoSe2 heterostructure, with the degree of valley polarization varying across different configurations and reaching a maximum value of 4.6 meV. The electronic properties, valley polarization and MAE of the system can be tuned by biaxial strains. The application of a biaxial strain ranging from -6% to +6% can enhance the valley polarization value from 0.9 meV to 12.9 meV. The directions of MAE of the Ni2Cl3I3/MoSe2 heterostructure can be changed at biaxial strains of -6%, +2%, +4% and +6%. The above calculation results show that the heterostructure system possesses rich electronic properties and tunability, with extensive potential applications in the fields of spintronic and valleytronic devices.
引用
收藏
页码:12196 / 12206
页数:11
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