From Planar to Vertical GaN-on-Si Power Devices: Reliability Challenges to Efficient Power Conversion (Invited)

被引：0

作者：

Zagni, Nicolo ^{[1
]}

机构：

[1] Univ Modena & Reggio Emilia, Dept Engn Enzo Ferrari, I-41125 Modena, Italy

来源：

8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024 | 2024年

关键词：

Electrification; GaN; Lateral HEMTs; Vertical MOSFETs; Power Electronics; Stability; Reliability;

D O I：

10.1109/EDTM58488.2024.10511585

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GaN-based devices are getting more common in the power electronics market thanks also to the improvements obtained in their stability and reliability. Further development of the technology in terms of either lateral p-GaN HEMT for low (100-V) to medium (650-V) voltage range or vertical GaN MOSFET for high (>1000-V) voltage range requires the careful assessment and modeling of the physical mechanisms leading to recoverable and permanent degradation. In this paper, a selection of the key stability/reliability issues are discussed for both lateral GaN HEMTs and vertical GaN MOSCAPs and Trench MOSFETs.

引用

页码：256 / 258

页数：3

共 11 条

[1] GaN-on-Si Power Technology: Devices and Applications [J].

Chen, Kevin J. ;

Haeberlen, Oliver ;

Lidow, Alex ;

Tsai, Chun Lin ;

Ueda, Tetsuzo ;

Uemoto, Yasuhiro ;

Wu, Yifeng .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (03) :779-795

[2]

Chini A., 2023, IEEE EDL, DOI 10.1109LED2023-3265503

[3]

Cioni M., 2021, IEEE TED, DOI [10.1109/TED2021.3105075, DOI 10.1109/TED2021.3105075]

[4] Stability and Reliability of Lateral GaN Power Field-Effect Transistors [J].

del Alamo, Jesus A. ;

Lee, Ethan S. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (11) :4578-4590

[5] GaN-based power devices: Physics, reliability, and perspectives [J].

Meneghini, Matteo ;

De Santi, Carlo ;

Abid, Idriss ;

Buffolo, Matteo ;

Cioni, Marcello ;

Khadar, Riyaz Abdul ;

Nela, Luca ;

Zagni, Nicolo ;

Chini, Alessandro ;

Medjdoub, Farid ;

Meneghesso, Gaudenzio ;

Verzellesi, Giovanni ;

Zanoni, Enrico ;

Matioli, Elison .

JOURNAL OF APPLIED PHYSICS, 2021, 130 (18)

[6]

Zagni N., 2023, IEEE TED

[7]

Zagni N., 2023, Journal of Semiconductors

[8]

Zagni N., 2023, IEEE JIRW

[9] Experimental and numerical investigation of Poole-Frenkel effect on dynamic R ON transients in C-doped p-GaN HEMTs [J].

Zagni, Nicolo ;

Cioni, Marcello ;

Iucolano, Ferdinando ;

Moschetti, Maurizio ;

Verzellesi, Giovanni ;

Chini, Alessandro .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2022, 37 (02)

[10] On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs [J].

Zagni, Nicolo ;

Chini, Alessandro ;

Puglisi, Francesco Maria ;

Pavan, Paolo ;

Verzellesi, Giovanni .

MICROMACHINES, 2021, 12 (06)

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