Investigation of Reliability Issues in a hybrid Extended Dual Source Double Gate Tunnel FET

This paper presents the design and analysis of an enhanced tunnel field-effect transistor (TFET) structure. The proposed structure comprises a dual source and a double gate, aiming to enhance the DC characteristics of the TFET. The dual source concept is used in the structure with two homogeneous gates, which play a major role in boosting the tunneling parameters. It also examines the affectability of source dimensions and drain doping on the performance of the proposed device. Furthermore, we have compared our proposed structure with the single source device. The proposed device after optimization exhibits an extraordinary ION/IOFF ratio of 2.33 x 1013, with an IOFF of 6.25 x 10-19A/mu m, and decent Ion of 1.46 x 10-5A/mu m along with a subthreshold swing (SS) of 43 mV/dec. The device characteristics have been analyzed in the presence of interface traps. The electrical parameters have been quantified against various types and concentrations of traps. The performance of the proposed device has been compared with the existing TFET structures.