Role of Si and SiO2 in Optoelectronic Device Fabrication

被引:7
作者
Rai, Harshita [1 ]
Singh, Kshitij R. B. [1 ]
Pandey, Shyam S. [1 ]
Natarajan, Arunadevi [2 ]
机构
[1] Kyushu Inst Technol, Grad Sch Life Sci & Syst Engn, 2-4 Hibikino,Wakamatsu, Kitakyushu, Fukuoka 8080196, Japan
[2] PSGR Krishnammal Coll Women, Dept Chem, Coimbatore 641004, Tamil Nadu, India
关键词
Optoelectronics; LEDs; Photodiode; Solar cells; Fabrication techniques; Si/SiO2; SOLAR-CELLS; SILICON; CONDUCTIVITY; LUMINESCENCE; MULTILAYERS; PASSIVATION; PERFORMANCE; DEPOSITION; EFFICIENCY;
D O I
10.1016/j.molstruc.2024.138994
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Silicon and its oxide deliver a dextrous way for engineering the successors of optoelectronic/photonic devices, by integrating fabrication techniques with heterostructured material possessing tuneable properties. Besides comprehensive knowledge, a collection of functional materials with device fabrication should be amplified. In general, silicon-based allied compounds can co-form with other materials like polymers, nanometal oxides, and organic/inorganic hybrid materials to deliver multiple electronic characteristics. A noteworthy and excellent performance of Si and its oxide secures a prominent position in the realm of the optoelectronics field. This study deliberates an exhaustive overview of advances in fabrication strategies, characteristics, Si/SiO2-based optoelectronic devices, and new materials used in this field. Additionally, this investigation spotlights the potential of Si/SiO2 in accentuating diverse applications like light-emitting diodes, solar cells, photodiodes, and phototransistors. In brief, this article will expose novel pathways of research and peregrination in this mushrooming field.
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页数:9
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