Modification of domain construction in PNN-PIN-PT piezoelectric ceramics for high electromechanical performance using defect engineering

Good piezoelectric properties and low mechanical losses are prerequisites for the application of high -power devices. In this study, an appropriate amount of Mn ions was introduced into a piezoelectric 0.46Pb(Ni1/ 3Nb2/3)O 3 -0.23Pb(In1/2Nb1/2)O 3 -0.31PbTiO 3 ceramic to enhance its electromechanical properties. The results revealed that the mechanical quality factor( Q m ) value of the ceramic was improved while maintaining high piezoelectric properties, and the dielectric loss was reduced. When Mn doping is 1.0 mol%, the d 33 component decreased by only -21%, while Q m increased by -13 times ( d 33 = 750 pC/N, Q m = 385, tan delta = 0.66%). The measurement of the internal bias field ( E i ) in the P -E loops of aged and nonaged samples showed that aging promoted the directional alignment of defect dipoles and improved their Q m . According to the PFM data, significant increase in Q m was mainly due to the "bulk effect" caused by low domain wall density. In turn, widening and lengthening of domains promoted the accumulation of most defective dipoles in the ceramic body, which greatly amplified the hardening effect. This work provides a good example of enhancing Q m in ceramic systems with high d 33 values through the construction of low domain wall densities.