共 36 条
Highly efficient anti-reflection coating on transparent material surface by a deposition-oxidation two-step process using very high-frequency plasma under atmospheric pressure
被引:1
作者:
Kakiuchi, Hiroaki
[1
]
Takeda, Seiya
[1
]
Yamauchi, Reo
[1
]
Ohmi, Hiromasa
[1
,2
]
机构:
[1] Osaka Univ, Grad Sch Engn, Dept Precis Engn, 2-1 Yamada Oka, Suita, Osaka 5650871, Japan
[2] Osaka Univ, Res Ctr Ultra Precis Sci & Technol, 2-1 Yamada Oka, Suita, Osaka 5650871, Japan
来源:
关键词:
Plasma processing;
Plasma deposition;
Silicon oxide;
Anti-reflection coatings;
Infrared absorption spectroscopy;
LOW-TEMPERATURES;
REFRACTIVE-INDEX;
SILICON;
FILMS;
SPECTROSCOPY;
LAYERS;
SI;
D O I:
10.1016/j.tsf.2024.140342
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Using atmospheric-pressure (AP) helium (He)-based plasma excited by a 150 MHz very high -frequency (VHF) power, the formation of low-refractive-index silicon oxide (SiO x ) layers for single -layer quarter-wave antireflection (AR) coatings of transparent substrate materials is studied. To effectively lower the refractive index of SiO x layers, a deposition-oxidation two-step process is adopted. Specifically, carbon and hydrogen-containing silicon oxide (SiOCH) films are coated in hexamethyldisiloxane and hydrogen-fed plasma on the substrates with fine polystyrene spheres arranged, and subsequently oxidized in oxygen-fed plasma. During the post-oxidation process, the SiOCH film is transformed into silica (SiO 2 )-like one and the polystyrene spheres underlying the film is simultaneously oxidized to be removed. As a result, a SiO 2 -like film with a very low refractive index of 1.23 and with excellent adhesion to the substrate is obtained. It is also demonstrated that the low-refractiveindex coating functions well as a quarter-wave AR coating of a glass substrate.
引用
收藏
页数:7
相关论文