Highly efficient anti-reflection coating on transparent material surface by a deposition-oxidation two-step process using very high-frequency plasma under atmospheric pressure

被引:1
作者
Kakiuchi, Hiroaki [1 ]
Takeda, Seiya [1 ]
Yamauchi, Reo [1 ]
Ohmi, Hiromasa [1 ,2 ]
机构
[1] Osaka Univ, Grad Sch Engn, Dept Precis Engn, 2-1 Yamada Oka, Suita, Osaka 5650871, Japan
[2] Osaka Univ, Res Ctr Ultra Precis Sci & Technol, 2-1 Yamada Oka, Suita, Osaka 5650871, Japan
关键词
Plasma processing; Plasma deposition; Silicon oxide; Anti-reflection coatings; Infrared absorption spectroscopy; LOW-TEMPERATURES; REFRACTIVE-INDEX; SILICON; FILMS; SPECTROSCOPY; LAYERS; SI;
D O I
10.1016/j.tsf.2024.140342
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using atmospheric-pressure (AP) helium (He)-based plasma excited by a 150 MHz very high -frequency (VHF) power, the formation of low-refractive-index silicon oxide (SiO x ) layers for single -layer quarter-wave antireflection (AR) coatings of transparent substrate materials is studied. To effectively lower the refractive index of SiO x layers, a deposition-oxidation two-step process is adopted. Specifically, carbon and hydrogen-containing silicon oxide (SiOCH) films are coated in hexamethyldisiloxane and hydrogen-fed plasma on the substrates with fine polystyrene spheres arranged, and subsequently oxidized in oxygen-fed plasma. During the post-oxidation process, the SiOCH film is transformed into silica (SiO 2 )-like one and the polystyrene spheres underlying the film is simultaneously oxidized to be removed. As a result, a SiO 2 -like film with a very low refractive index of 1.23 and with excellent adhesion to the substrate is obtained. It is also demonstrated that the low-refractiveindex coating functions well as a quarter-wave AR coating of a glass substrate.
引用
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页数:7
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