Highly Efficient Spin Current Transport Properties in Spintronic Devices Based on Topological Insulator

Recently, topological insulators (TIs) have regained extensive attention in spintronics due to their potential applications in new-generation spintronic devices, following the discovery of the quantum Hall effect and quantum anomalous Hall effect, which introduce the topological concept. In this review, the exotic spin transport phenomena are explored in TIs. The review offers a concise overview of the fundamental principles of TIs, followed by an exploration of diverse fabrication methods for TI materials. Characterization techniques of the topological surface states are also presented. The review delves into the intriguing spin current transport phenomena, focusing on spin-to-charge and charge-to-spin conversions in TI/ferromagnet bilayers, respectively. The review culminates summarizing key insights and project future directions for research on spin transport phenomena in TIs, emphasizing practical implications. Owing to the inherent spin-momentum locking property of surface states, topological insulators (TIs) exhibit an excellent performance on the spin-to-charge interconversion. This review explores advanced spin current transport in TI/ferromagnet bilayers, highlighting their potential in next-generation spintronic devices. These advancements showcase TIs' versatility for spintronics and stress the necessity to integrate them with established manufacturing for practical applications. image