Theoretical insight into the enhancement of longer-wavelength light absorption in silicon solar cell with multilevel impurities

In this article, we theoretically demonstrate multilevel impurity photovoltaic effect in an efficient silicon dualhomojunction solar cell that ensures an extended absorption of longer wavelength light. Along with suitable contact work functions (Ni and Ta as anode and cathode, respectively), three impurity energy levels from acceptor type impurities (One from Tl and two from Zn) have been introduced in the energy gap of the absorber layer of the solar cell. The simulations have been performed with Solar Cell Capacitance Simulator (SCAPS-1D) program. The pristine Si solar cell shows a PCE of 25.4% with JSC = 37.99 mA/cm2, VOC = 0.780 V and FF = 85.76%. While the incorporation of Tl impurity level alone provides a PCE of 33.4%, with JSC = 51.56 mA/cm2, VOC = 0.789 V and FF = 82.03%, respectively. The PCE of the solar cell further enhances to 35.4% with an elevation of the short circuit current by 3.76 mA/cm2 due to the inclusion of Zn impurity into the optimized structure. This increment of the JSC and hence PCE is evolved from the longer wavelength light absorption due to impurity-assisted two-step photon upconversion in the solar cell.