Self-Excited Free-Standing VO2 Film for Infrared Optical Limiter

被引:6
作者
Zhao, Shanguang [1 ]
Li, Liang [1 ]
Zhu, Jinglin [1 ]
Liu, Meiling [1 ]
Zhou, Ting [1 ]
Zhou, Changqi [2 ,3 ]
Lin, Zhihan [1 ]
Li, Jianjun [1 ]
Sun, Bowen [1 ]
Lu, Yuan [2 ,3 ]
Zou, Chongwen [1 ]
机构
[1] Univ Sci & Technol China, Sch Nucl Sci & Technol, Natl Synchrotron Radiat Lab, Hefei 230029, Anhui, Peoples R China
[2] NUDT, Coll Elect Engn, Infrared & Low Temp Plasma Key Lab Anhui Prov, Hefei 230037, Peoples R China
[3] NUDT, Coll Elect Engn, Adv Laser Technol Lab Anhui Prov, Hefei 230037, Peoples R China
基金
中国国家自然科学基金;
关键词
electric heating; flexible; phase transition; vanadium dioxide; METAL-INSULATOR-TRANSITION; VANADIUM DIOXIDE; HYDROGENATION; NANOMEMBRANES; PERFORMANCE; LASERS;
D O I
10.1002/lpor.202400426
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Effective optical limiters (OLs) are necessary devices for the protection of various sensitive photo-detectors, cameras, infrared sensors, or even the human eyes once encountering unexpected high-intensity illumination or laser blinding attacks. Vanadium dioxide (VO2) shows pronounced infrared switching behavior across the phase transition, which is considered as an idea optical limiter for broad-band infrared laser protection. However, the self-adapting optical limiter function based on VO2 is quite difficult to realize since the open-state absorptance of the VO2 layer is always very low, which makes the laser irradiation cannot trigger the phase transition quickly. In the current study, a self-excited VO2 infrared optical limiter is proposed, which is integrated by a transferred VO2 layer, InGaAs micro/nano wires, and a local heater. Based on the"optical response-electric heating" strategy, the phase transition of VO2 layer can be quickly triggered once the incident laser beam intensity exceeds the pre-set threshold value. In addition, this integrated device has an excellent switching ratio, flexible controllability, and stability. This work achieves a practical VO2 optical limiter device and provides a promising strategy for developing VO2-based integrated multifunctional devices in the future.
引用
收藏
页数:8
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