Optoelectronic properties of perovskite thin films derived from lead sulfide via radio frequency magnetron sputtering: effect of the substrate temperature

被引:1
作者
Wongcharoen, Sittan [1 ]
Raifuku, Itaru [2 ]
Yu, Xianhuan [1 ]
Kawanishi, Hidenori [1 ]
Bonnassieux, Yvan [3 ]
Cabarrocas, Pere Roca, I [3 ]
Uraoka, Yukiharu [1 ]
机构
[1] Nara Inst Sci & Technol, Div Mat Sci, 8916-5 Takayama, Ikoma, Nara 6300192, Japan
[2] Aoyama Gakuin Univ, Dept Elect & Elect Engn & Elect, 5-10-1 Fuchinobe,Chuo Ku, Sagamihara, Kanagawa 2525258, Japan
[3] Ecole Polytech, Inst Polytech Paris, LPICM, CNRS, Route Saclay, F-91128 Palaiseau, France
关键词
perovskite; RF sputtering; lead sulfide; photovoltaics; solar cells; SOLAR-CELLS; PERFORMANCE; PBI2;
D O I
10.35848/1347-4065/ad55c0
中图分类号
O59 [应用物理学];
学科分类号
摘要
Methylammonium lead iodide (CH3NH3PbI3; MAPbI3) films were fabricated from sputtered lead sulfide (PbS) films prepared at various substrate temperatures according to the Thornton structural zone model. PbS films were converted to lead iodide (PbI2) and finally to MAPbI3 in a two-step gas-phase reaction. The increase in substrate temperature caused the morphology to change to fibrous interconnected grains, which played an important role in improving the optoelectrical properties of perovskite films. Moreover, enhanced charge transport of MAPbI3 films was observed owing to the fibrous interconnected PbI2 precursor, which was confirmed by a higher absorption coefficient and longer carrier lifetime.
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页数:4
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