Direct topological insulator transitions in three dimensions are destabilized by nonperturbative effects of disorder

被引:2
作者
Fu, Yixing [1 ]
Wilson, Justin H. [1 ,2 ,3 ]
Huse, David A. [4 ]
Pixley, J. H. [1 ,5 ]
机构
[1] Rutgers State Univ, Ctr Mat Theory, Dept Phys & Astron, Piscataway 08854, NJ USA
[2] Louisiana State Univ, Dept Phys & Astron, Baton Rouge, LA 70803 USA
[3] Louisiana State Univ, Ctr Computat & Technol, Baton Rouge, LA 70803 USA
[4] Princeton Univ, Phys Dept, Princeton, NJ 08544 USA
[5] Flatiron Inst, Ctr Computat Quantum Phys, 162 5th Ave, New York, NY 10010 USA
基金
美国国家科学基金会;
关键词
PHASE-TRANSITION; DEGENERATE SEMICONDUCTORS; CRITICAL-BEHAVIOR; WEYL SEMIMETALS; BAND TAILS;
D O I
10.1103/PhysRevB.109.205106
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We reconsider the phase diagram of a three-dimensional Z 2 topological insulator in the presence of shortranged potential disorder, with the insight that nonperturbative rare states destabilize the noninteracting Dirac semimetal critical point separating different topological phases. Based on our numerical data on the density of states, conductivity, and wave functions, we argue that the putative Dirac semimetal line is destabilized into a diffusive metal phase of finite extent due to nonperturbative effects of rare regions. We discuss the implications of these results for past and current experiments on doped topological insulators.
引用
收藏
页数:11
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