Self-powered epitaxial graphene/SiC-C heterojunction UV photodetector

被引：0
|
作者：
Chen, Huiqing [1 ]
Shao, Chen [1 ]
Li, Xiaomeng [1 ,2 ]
Chen, Xiufang [1 ,2 ]
Wang, Rongkun [1 ,2 ]
Xiao, Longfei [1 ,2 ]
Li, Yangfan [1 ]
Xu, Mingsheng [1 ,2 ]
Yang, Xianglong [1 ,2 ]
Xie, Xuejian [1 ,2 ]
Xu, Xiangang [1 ,2 ]
机构：
[1] Shandong Univ, Inst Novel Semicond, Jinan 250100, Peoples R China
[2] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 2024年 / 376卷
关键词：
Self; -powered; 4H-SiC; Graphene; UV photodetector; HIGH-PERFORMANCE; PYROELECTRIC NANOGENERATORS; SILICON-CARBIDE; CRYSTALS; SURFACES;
D O I：
10.1016/j.sna.2024.115604
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, local oxygen plasma treatment of SiC carbon surface epitaxial graphene (EG/SiC-C) samples was carried out by using an oxygen plasma processor. Some vacancy defects were introduced into the graphene, and the electronic structure of the graphene was regulated. After oxygen plasma treatment, the work function of EG/ SiC-C increased, and the doping type gradually changed to P-type. Finally, a self-powered epitaxial graphene (EG)/SiC heterojunction UV photodetector with spot position response characteristics was prepared by reasonable device structure design.
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页数：14
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