Polishing performance and material removal mechanism in the solid-phase Fenton reaction based polishing process of SiC wafer using diamond gel disc

The use of SiC wafer is widespread in many fields, especially in aerospace, energy, 5 G communications, and microelectronics. Chemical-mechanical polishing (CMP) is the primary method used for achieving an ultrasmooth surface on SiC wafers. However, CMP suffers from low efficiency, leading to increased processing time and costs. To address this issue, we developed a novel diamond gel polishing disc that incorporates SiO2/ Fe3O4 (S/F) powder. The disc enhances polishing efficiency through a solid-phase Fenton reaction between the disc and SiC. The research investigates the reaction mechanism and the material removal model of the polishing process using SEM, TEM, and XPS analysis. Experimental studies are conducted to assess the polishing performance and validate the effectiveness of the theoretical model. The findings indicate that SiC undergo a solidphase Fenton reaction with polishing disc mixed S/F powder (SG-S/F disc) during polishing. The Fenton reaction generates hydroxyl radicals (center dot OH), which break the Si-C and Si-Si bonds in the crystal structure, leading to the formation of a softer nanoscale amorphous oxide layer on the SiC surface. The cyclic generation and removal of this oxide layer enable highly efficient polishing of SiC wafers. Compared to a gel disc without S/F (SG disc), SiC polished with the SG-S/F disc exhibits superior surface quality. Additionally, the material removal rate (MRR) of the SG-S/F disc reaches 1.42 mu m/h, representing a 51.1 % improvement over that of the SG disc. These results clearly demonstrate that the solid-phase Fenton reaction significantly enhances the polishing performance of the gel polishing disc.