Effect of screening on energy-dependent electron-phonon relaxation rate via intrinsic and extrinsic scattering channels in graphene on GaAs substrate

We obtain analytical results on the effect of screening on electron-phonon (e-p) relaxation rate in single-layer graphene (SLG) placed on any substrate using the Boltzmann transport formalism (BTF). The screening has been taken into account through the Thomas-Fermi (TF) and Random Phase Approximation (RPA) model. The four intrinsic and extrinsic phononic modes considered for electron-phonon scattering are the acoustic, optic, surface polar acoustic (piezoelectric), and surface polar optic (SO) phonons. All the four considered phononic modes coupling with free carriers provide significant pathways for e-p relaxation. We further investigate the significance of screening in the four phononic modes in electron energy-dependent e-p relaxation rate in SLG on GaAs substrate in particular. The obtained screened analytical solutions are novel and are not reported elsewhere. Copyright (C) 2022 Elsevier Ltd. All rights reserved. Selection and peer-review under responsibility of the scientific committee of the Condensed Matter Physics.