The composited high reflectivity p-type electrodes with patterned ITO for AlGaN-based ultraviolet light emitting diodes

被引：3

作者：

Lang, J. ^{[1
]}

Xu, F. J. ^{[1
]}

Wang, J. M. ^{[1
]}

Zhang, L. S. ^{[1
]}

Sun, Z. H. ^{[1
]}

Zhang, H. D. ^{[1
]}

Guo, X. Q. ^{[1
]}

Zhang, Z. Y. ^{[1
]}

Ji, C. ^{[1
]}

Tan, F. Y. ^{[1
]}

Ji, C. Z. ^{[1
]}

Kang, X. N. ^{[1
]}

Yang, X. L. ^{[1
]}

Tang, N. ^{[1
]}

Chen, Z. Z. ^{[1
]}

Wang, X. Q. ^{[1
,2
,3
]}

Ge, W. K. ^{[1
]}

Shen, B. ^{[1
,2
,3
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

[2] Peking Univ, Minist Educ, Nanooptoelect Frontier Ctr, Beijing 100871, Peoples R China

[3] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2024年 / 125卷 / 01期

基金：

中国国家自然科学基金;

关键词：

OPTICAL POLARIZATION; EFFICIENCY; LAYER; ENHANCEMENT;

D O I：

10.1063/5.0216179

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Composited p-type electrodes with high reflectivity have been investigated in AlGaN-based ultraviolet light emitting diodes (UV-LEDs) to improve the light extraction efficiency, which are composed of a patterned ITO layer and an Al reflector. It is verified that the patterned ITO with a thickness of 30 nm can not only well form Ohmic contact with p-GaN capping layer, but also be nearly 90% transparent to ultraviolet light, and thus presenting a reflectivity of 73% at 280 nm when combined with an Al reflector. Further experimental efforts confirm that the performance of the UV-LEDs is dramatically improved with such p-type electrodes. The maximum light output power and wall plug efficiency in the current range of 0-100 mA are severally increased by 49.8% and 54.2% compared to the device with traditional Ni/Au electrodes.

引用

页数：6

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