The composited high reflectivity p-type electrodes with patterned ITO for AlGaN-based ultraviolet light emitting diodes

被引：3
作者：
Lang, J. [1 ]
Xu, F. J. [1 ]
Wang, J. M. [1 ]
Zhang, L. S. [1 ]
Sun, Z. H. [1 ]
Zhang, H. D. [1 ]
Guo, X. Q. [1 ]
Zhang, Z. Y. [1 ]
Ji, C. [1 ]
Tan, F. Y. [1 ]
Ji, C. Z. [1 ]
Kang, X. N. [1 ]
Yang, X. L. [1 ]
Tang, N. [1 ]
Chen, Z. Z. [1 ]
Wang, X. Q. [1 ,2 ,3 ]
Ge, W. K. [1 ]
Shen, B. [1 ,2 ,3 ]
机构：
[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China
[2] Peking Univ, Minist Educ, Nanooptoelect Frontier Ctr, Beijing 100871, Peoples R China
[3] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2024年 / 125卷 / 01期
基金：
中国国家自然科学基金;
关键词：
OPTICAL POLARIZATION; EFFICIENCY; LAYER; ENHANCEMENT;
D O I：
10.1063/5.0216179
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Composited p-type electrodes with high reflectivity have been investigated in AlGaN-based ultraviolet light emitting diodes (UV-LEDs) to improve the light extraction efficiency, which are composed of a patterned ITO layer and an Al reflector. It is verified that the patterned ITO with a thickness of 30 nm can not only well form Ohmic contact with p-GaN capping layer, but also be nearly 90% transparent to ultraviolet light, and thus presenting a reflectivity of 73% at 280 nm when combined with an Al reflector. Further experimental efforts confirm that the performance of the UV-LEDs is dramatically improved with such p-type electrodes. The maximum light output power and wall plug efficiency in the current range of 0-100 mA are severally increased by 49.8% and 54.2% compared to the device with traditional Ni/Au electrodes.
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页数：6
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