The composited high reflectivity p-type electrodes with patterned ITO for AlGaN-based ultraviolet light emitting diodes

被引：5
作者：
Lang, J. [1 ]
Xu, F. J. [1 ]
Wang, J. M. [1 ]
Zhang, L. S. [1 ]
Sun, Z. H. [1 ]
Zhang, H. D. [1 ]
Guo, X. Q. [1 ]
Zhang, Z. Y. [1 ]
Ji, C. [1 ]
Tan, F. Y. [1 ]
Ji, C. Z. [1 ]
Kang, X. N. [1 ]
Yang, X. L. [1 ]
Tang, N. [1 ]
Chen, Z. Z. [1 ]
Wang, X. Q. [1 ,2 ,3 ]
Ge, W. K. [1 ]
Shen, B. [1 ,2 ,3 ]
机构：
[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China
[2] Peking Univ, Minist Educ, Nanooptoelect Frontier Ctr, Beijing 100871, Peoples R China
[3] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2024年 / 125卷 / 01期
基金：
中国国家自然科学基金;
关键词：
OPTICAL POLARIZATION; EFFICIENCY; LAYER; ENHANCEMENT;
D O I：
10.1063/5.0216179
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Composited p-type electrodes with high reflectivity have been investigated in AlGaN-based ultraviolet light emitting diodes (UV-LEDs) to improve the light extraction efficiency, which are composed of a patterned ITO layer and an Al reflector. It is verified that the patterned ITO with a thickness of 30 nm can not only well form Ohmic contact with p-GaN capping layer, but also be nearly 90% transparent to ultraviolet light, and thus presenting a reflectivity of 73% at 280 nm when combined with an Al reflector. Further experimental efforts confirm that the performance of the UV-LEDs is dramatically improved with such p-type electrodes. The maximum light output power and wall plug efficiency in the current range of 0-100 mA are severally increased by 49.8% and 54.2% compared to the device with traditional Ni/Au electrodes.
引用
收藏
页数：6
相关论文
共 26 条
  • [1] Review on the Progress of AlGaN-based Ultraviolet Light-Emitting Diodes
    Chen, Yuxuan
    Ben, Jianwei
    Xu, Fujun
    Li, Jinchai
    Chen, Yang
    Sun, Xiaojuan
    Li, Dabing
    [J]. FUNDAMENTAL RESEARCH, 2021, 1 (06): : 717 - 734
  • [2] Enhanced light extraction efficiency of micro-ring array AlGaN deep ultraviolet light-emitting diodes
    Fayisa, Gabisa Bekele
    Lee, Jong Won
    Kim, Jungsub
    Kim, Yong-Il
    Park, Youngsoo
    Kim, Jong Kyu
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (09)
  • [3] A method for current spreading analysis and electrode pattern design in light-emitting diodes
    Hwang, Sungmin
    Shim, Jongin
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (05) : 1123 - 1128
  • [4] 13 mW operation of a 295-310 nm AlGaN UV-B LED with a p-AlGaN transparent contact layer for real world applications
    Khan, M. Ajmal
    Maeda, Noritoshi
    Jo, Masafumi
    Akamatsu, Yuki
    Tanabe, Ryohei
    Yamada, Yoichi
    Hirayama, Hideki
    [J]. JOURNAL OF MATERIALS CHEMISTRY C, 2019, 7 (01) : 143 - 152
  • [5] A study of transparent indium tin oxide (ITO) contact to p-GaN
    Kim, DW
    Sung, YJ
    Park, JW
    Yeom, GY
    [J]. THIN SOLID FILMS, 2001, 398 : 87 - 92
  • [6] The emergence and prospects of deep-ultraviolet light-emitting diode technologies
    Kneissl, Michael
    Seong, Tae-Yeon
    Han, Jung
    Amano, Hiroshi
    [J]. NATURE PHOTONICS, 2019, 13 (04) : 233 - 244
  • [7] On the integrated p-type region free of electron blocking layer for AlGaN-based deep-ultraviolet light emitting diodes
    Lang, J.
    Xu, F. J.
    Wang, J. M.
    Zhang, L. S.
    Ji, C.
    Guo, X. Q.
    Ji, C. Z.
    Zhang, Z. Y.
    Tan, F. Y.
    Fang, X. Z.
    Kang, X. N.
    Yang, X. L.
    Tang, N.
    Wang, X. Q.
    Ge, W. K.
    Shen, B.
    [J]. APPLIED PHYSICS LETTERS, 2023, 123 (26)
  • [8] Progress in Performance of AlGaN-Based Ultraviolet Light Emitting Diodes
    Lang, Jing
    Xu, Fujun
    Wang, Jiaming
    Zhang, Lisheng
    Fang, Xuzhou
    Zhang, Ziyao
    Guo, Xueqi
    Ji, Chen
    Ji, Chengzhi
    Tan, Fuyun
    Wu, Yong
    Yang, Xuelin
    Kang, Xiangning
    Qin, Zhixin
    Tang, Ning
    Wang, Xinqiang
    Ge, Weikun
    Shen, Bo
    [J]. ADVANCED ELECTRONIC MATERIALS, 2025, 11 (01)
  • [9] Improved efficiency of AlGaN-based flip-chip deep-ultraviolet LEDs using a Ni/Rh/Ni/Au p-type electrode
    Liao, Zhefu
    Lv, Zhenxing
    Sun, Ke
    Zhou, Shengjun
    [J]. OPTICS LETTERS, 2023, 48 (16) : 4229 - 4232
  • [10] Enhancing the light-extraction efficiency of AlGaN deep-ultraviolet light-emitting diodes using highly reflective Ni/Mg and Rh as p-type electrodes
    Maeda, Noritoshi
    Yun, Joosun
    Jo, Masafumi
    Hirayama, Hideki
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (04)
123