Low-Power, High-Performance Electro-Optic Modulator Based on MoS2-SiN Integrated Waveguide

Two-dimensional layered materials and low-loss, high-quality on-chip functional devices formed by optical waveguides have received widespread attention in the field of integrated photonics. In this work, we demonstrate an electro-optic modulator based on Mach-Zehnder interference (MZI) for the first time, which is integrated with MoS2. The ionic liquid is directly cover the surface of the MoS2-SiN waveguide device to form a capacitor structure Due to the outstanding electro-refractive and electro-absorption properties of MoS2, the phase modulation efficiency obtained by adjusting the voltage on the long and short arms is 445 pm/V, the maximum phase change is 1.14 pi, the half-wave voltage length product V pi L is 0.11 V<middle dot>cm, and the maximum effective refractive index offset is 2.93 x 10(-3) RIU. Notably, we can achieve a wavelength shift of 1780 nm and an electro-optic response bandwidth exceeding 8.5 GHz at voltage saturation. The proposed electro-optic modulator is expected to be applied to low-loss, high-performance large-scale photonic integrated systems.