0.58 mΩ;cm2/523 V GaN Vertical Schottky Barrier Diode With 15.6 kA/cm2; Surge Current Enabled by Laser Lift-Off/ Annealing and N-Ion Implantation

被引：2

作者：

Qi, Wei ^{[1
]}

Zhou, Feng ^{[1
]}

Ma, Teng ^{[2
]}

Xu, Weizong ^{[1
]}

Zhou, Dong ^{[1
]}

Ren, Fangfang ^{[1
]}

Chen, Dunjun ^{[1
]}

Zhang, Rong ^{[1
]}

Zheng, Youdou ^{[1
]}

Lu, Hai ^{[1
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Peoples R China

[2] China Elect Prod Reliabil & Environm Testing Res, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou 511370, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2024年 / 45卷 / 06期

关键词：

Surges; Substrates; Lasers; Anodes; Ohmic contacts; Three-dimensional displays; Schottky barriers; GaN; fully-vertical SBD; laser lift-off; laser annealing; termination; electrothermal robustness; surge current; OHMIC CONTACT; VOLTAGE; REDUCTION; AVALANCHE; LEAKAGE; DEVICES;

D O I：

10.1109/LED.2024.3390125

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Achieving high-performance fully-vertical GaN devices on low-cost and large-scale foreign substrates are highly attractive for the development of device technology. In this work, by performing pulsed laser lift-off and laser annealing techniques, high-performance fully-vertical GaN Schottky barrier diodes (SBDs) with superior N-face ohmic contact characteristics are demonstrated. The resulting device exhibits low specific contact resistivity of 3.51x 10(-5 )Omega;cm(2) and differential specific on-resistance of 0.58 m Omega;cm(2), as well as intact anode Schottky contact. In particular, this device demonstrates robust electrothermal robustness, such as the largest surge current density of 15.6 kA/cm(2) to date. Moreover, by implementing N-implanted termination, the breakdown voltage of the device is remarkably enhanced from 240 to 523 V, which is competitive with the state-of-the-art quasi-vertical SBDs. These results reveal the notable potential of pulsed laser lift-off/annealing combined with N-implanted termination for realizing fully-vertical devices.

引用

页码：964 / 967

页数：4

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