Low-Temperature Annealing in O2 to Annihilate the Fixed Charges in 4H-SiC/SiO2 Interface Induced by High-N-Density Nitridation Process

被引：0

作者：

Yang, Tianlin ^{[1
]}

Onaya, Takashi ^{[2
]}

Kita, Koji ^{[2
,3
]}

机构：

[1] Univ Tokyo, Dept Mat Engn, Bunkyo, Tokyo 1138656, Japan

[2] Univ Tokyo, Dept Adv Mat Sci, Kashiwa, Chiba 2778561, Japan

[3] Univ Tokyo, Dept Mat Engn, Kashiwa, Chiba 2778561, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2024年 / 45卷 / 07期

关键词：

4H-SiC/SiO2 MOS interface; post-nitridation annealing; fixed charge; OXIDATION; MOSFETS;

D O I：

10.1109/LED.2024.3400954

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low-temperature annealing process for 4H-SiC/SiO2 stack in O-2 ambient was found to annihilate the positive fixed charges induced by the interface nitridation process effectively, while preserving the interface N density. The key to design the post-nitridation annealing process in O-2 ambient was proposed as the selection of a relatively low temperature and a sufficiently long duration, which is to selectively trigger the annihilation of fixed charges while suppressing the N-removal from the interface.

引用

页码：1145 / 1148

页数：4

共 32 条

[1]

Afanas'ev VV, 1997, PHYS STATUS SOLIDI A, V162, P321, DOI 10.1002/1521-396X(199707)162:1<321::AID-PSSA321>3.0.CO

[2]

2-F

[3]

[Anonymous], 2006, Semiconductor Material and Device Characterization

[4] Reactions and diffusion of water and oxygen molecules in amorphous SiO2 -: art. no. 055508 [J].

Bakos, T ;

Rashkeev, SN ;

Pantelides, ST .

PHYSICAL REVIEW LETTERS, 2002, 88 (05) :4

[5] Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide [J].

Chung, GY ;

Tin, CC ;

Williams, JR ;

McDonald, K ;

Di Ventra, M ;

Pantelides, ST ;

Feldman, LC ;

Weller, RA .

APPLIED PHYSICS LETTERS, 2000, 76 (13) :1713-1715

[6] Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation [J].

Chung, GY ;

Williams, JR ;

Tin, CC ;

McDonald, K ;

Farmer, D ;

Chanana, RK ;

Pantelides, ST ;

Holland, OW ;

Feldman, LC .

APPLIED SURFACE SCIENCE, 2001, 184 (1-4) :399-403

[7] Trap passivation of 4H-SiC/SiO2 interfaces by nitrogen annealing [J].

Das, Suman ;

Gu, Hengfei ;

Wang, Lu ;

Ahyi, Ayayi ;

Feldman, Leonard C. ;

Garfunkel, Eric ;

Kuroda, Marcelo A. ;

Dhar, Sarit .

JOURNAL OF APPLIED PHYSICS, 2023, 133 (21)

[8] On the electron affinity of silicon carbide polytypes [J].

Davydov, S. Yu. .

SEMICONDUCTORS, 2007, 41 (06) :696-698

[9] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[10] Nitridation anisotropy in SiO2/4H-SiC -: art. no. 074902 [J].

Dhar, S ;

Feldman, LC ;

Chang, KC ;

Cao, Y ;

Porter, LM ;

Bentley, J ;

Williams, JR .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (07)

← 1 2 3 4 →