Ultrafast optical modulation of the fluorescence from a single-photon emitter in silicon carbide

被引：0
|
作者：
He, Mengting [1 ]
Cao, Yujing [1 ]
Lin, Junjie [1 ]
Ju, Zhiping [2 ,3 ]
Ju, Hiping [1 ,2 ,3 ]
Wu, Botao [1 ,4 ,5 ,6 ]
Wu, Ande [1 ,4 ,5 ,6 ,7 ]
机构：
[1] East China Normal Univ, State Key Lab Precis Spect, Shanghai 200241, Peoples R China
[2] Photon Technol Zhejiang Co Ltd, Jiaxing 314100, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Natl Key Lab Mat Integrated Circuits, Shanghai 200050, Peoples R China
[4] East China Normal Univ, Dept Phys, Shanghai 200062, Peoples R China
[5] East China Normal Univ, Shanghai Key Lab Magnet Resonance, Shanghai 200241, Peoples R China
[6] East China Normal Univ, Chongqing Key Lab Precis Opt, Chongqing Inst, Chongqing 401120, Peoples R China
[7] Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Peoples R China
来源：
PHOTONICS RESEARCH | 2024年 / 12卷 / 05期
基金：
中国国家自然科学基金;
关键词：
COHERENT CONTROL; TRANSISTOR; SPINS;
D O I：
10.1364/PRJ.517734
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The quest for the room-temperature optical transistor based on nonlinearities in single atoms or molecules is attracting a lot of attention. In this work, a single-photon emitter in cubic silicon carbide is verified that can operate as an optical switch at room temperature under pulsed green laser illumination with a near-infrared pulsed laser as the control gate. We demonstrated an ultrafast and reversible optical modulation with a high photoluminescence intensity suppression ratio up to 97.9% and a response time as short as 287.9 +/- 5.7 ps. The current development provides insights for high-precision and ultrafast optical switches, with possibilities for integration with emerging electronic installations to realize more intelligent photoelectric integrated devices. (c) 2024 Chinese Laser Press
引用
收藏
页码：941 / 946
页数：6
相关论文
共 29 条
  • [1] Bright and photostable single-photon emitter in silicon carbide
    Lienhard, Benjamin
    Schroeder, Tim
    Mouradian, Sara
    Dolde, Florian
    Toan Trong Tran
    Aharonovich, Igor
    Englund, Dirk
    OPTICA, 2016, 3 (07): : 768 - 774
  • [2] Single-photon emitting diode in silicon carbide
    Lohrmann, A.
    Iwamoto, N.
    Bodrog, Z.
    Castelletto, S.
    Ohshima, T.
    Karle, T. J.
    Gali, A.
    Prawer, S.
    McCallum, J. C.
    Johnson, B. C.
    NATURE COMMUNICATIONS, 2015, 6
  • [3] Silicon carbide single-photon sources: challenges and prospects
    Castelletto, Stefania
    MATERIALS FOR QUANTUM TECHNOLOGY, 2021, 1 (02):
  • [4] Bright Single-Photon Emitters in Cubic Silicon Carbide
    He, Mengting
    Ju, Zhiping
    Xue, Yingxian
    Lin, Junjie
    Cao, Yujing
    Wu, Botao
    Wu, E.
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2024, 30 (01) : 1 - 6
  • [5] Manipulating Single-Photon Emission from Point Defects in Diamond and Silicon Carbide
    Bathen, Marianne Etzelmuller
    Vines, Lasse
    ADVANCED QUANTUM TECHNOLOGIES, 2021, 4 (07)
  • [6] Electro-optical Characterization of Superconducting Nanowire Single-Photon Detectors Fabricated on 3C Silicon Carbide
    Martini, F.
    Gaggero, A.
    Mattioli, F.
    Leoni, R.
    JOURNAL OF LOW TEMPERATURE PHYSICS, 2020, 199 (1-2) : 563 - 568
  • [7] Enhancing the brightness of electrically driven single-photon sources using color centers in silicon carbide
    Khramtsov, Igor A.
    Vyshnevyy, Andrey A.
    Fedyanin, Dmitry Yu.
    NPJ QUANTUM INFORMATION, 2018, 4
  • [8] Purcell enhancement of single-photon emitters in silicon
    Gritsch, Andreas
    Ulanowski, Alexander
    Reiserer, Andreas
    OPTICA, 2023, 10 (06): : 783 - 789
  • [9] A review on single photon sources in silicon carbide
    Lohrmann, A.
    Johnson, B. C.
    McCallum, J. C.
    Castelletto, S.
    REPORTS ON PROGRESS IN PHYSICS, 2017, 80 (03)
  • [10] Bright Silicon Carbide Single-Photon Emitting Diodes at Low Temperatures: Toward Quantum Photonics Applications
    Khramtsov, Igor A.
    Fedyanin, Dmitry Yu.
    NANOMATERIALS, 2021, 11 (12)
123