High-Performance 4H-SiC EUV Photodiode With Lateral p-n Junction Fabricated by Selective-Area Ion Implantation

被引：0

作者：

Wang, Yifu ^{[1
,2
]}

Wang, Zhiyuan ^{[1
,2
]}

Xu, Weizong ^{[1
,2
,3
]}

Zhou, Feng ^{[1
,2
]}

Zhou, Dong ^{[1
,2
]}

Ren, Fangfang ^{[1
,2
,3
]}

Chen, Dunjun ^{[1
,2
]}

Zhang, Rong ^{[1
,2
,3
]}

Zheng, Youdou ^{[1
,2
]}

Lu, Hai ^{[1
,2
,3
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Peoples R China

[2] MOE, Key Lab Optoelect Devices & Syst Extreme Performa, Nanjing 210093, Peoples R China

[3] Hefei Natl Lab, Hefei 230088, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2024年 / 45卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Silicon carbide; Ultraviolet sources; Temperature measurement; Detectors; Ion implantation; Capacitance-voltage characteristics; Capacitance; 4H-SiC; photodiode; extreme ultraviolet; ion implantation; EXTREME-ULTRAVIOLET; PHOTOABSORPTION; DETECTOR;

D O I：

10.1109/LED.2024.3381129

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, a 4H-SiC EUV photodiode (PD) with lateral p-n junction formed by selective-area ion implantation is investigated, in which grid-shaped p-type contact region is designed for enhancing effective EUV light absorption. The large area SiC PD with 9 mm diameter exhibits a low dark current density of similar to 9 pA/cm(2) and a high responsivity of 0.07 A/W at 13.5 nm under 5 V reverse bias. The detectivity of PD is further determined to be similar to 5.9 x 10(12) cmHz(0.5)W(-1) based on 1/f noise test. Two-dimensional photocurrent mapping of photosensitive area indicates that the non-uniformity of photo-responsivity at 13.5 nm is less than 0.67%. When tested by using a 266 nm pulse laser, the PD shows a fast rise time of similar to 4.3 ns in transient response measurement. The PD also exhibits low dark current, stable capacitance and responsivity at elevated temperatures up to 150 degrees C, suggesting that the detector has good potential for high-temperature operation.

引用

页码：857 / 860

页数：4

共 41 条

[41] Performance Tradeoffs for Ultra-high Voltage (15 kV to 25 kV) 4H-SiC n-channel and p-channel IGBTs
Chowdhury, S.
Chow, T. P.
2016 28TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2016, : 75 - 78

← 1 2 3 4 5 →