A 66-112.5 GHz low noise amplifier with minimum NF of 3.9 dB in 0.1-μm GaAs pHEMT technology

被引：0
作者：
Li, Ze-Kun [1 ]
Chen, Ji-Xin [1 ,2 ]
Zheng, Si-Dou [1 ]
Hong, Wei [1 ,2 ]
机构：
[1] Southeast Univ, State Key Lab Millimeter Waves, Nanjing 210096, Peoples R China
[2] Purple Mt Lab, Nanjing 211111, Peoples R China
来源：
JOURNAL OF INFRARED AND MILLIMETER WAVES | 2024年 / 43卷 / 02期
基金：
中国国家自然科学基金;
关键词：
GaAs pHEMT; low noise amplifier (LNA); wide band; W-band;
D O I：
10.11972/j.issn.1001-9014.2024.02.007
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A wideband low noise amplifier (LNA) covering the whole W-band in 0. 1-mu m GaAs pHEMT technology is designed. To reduce the inter-stage crosstalk and obtain wideband matching,a bypass circuit composed of dual shunt capacitors is proposed to provide wideband RF grounding. The wideband input matching and optimal noise matching are implemented by a dual-resonance input matching network. The measurement results exhibit a peak gain of 20. 4 dB at 108 GHz. The measured small signal gain is 16. 9-20. 4 dB across 66-112. 5 GHz. The measured noise figure (NF) is 3. 9 dB at 90 GHz. The measured input 1-dB compression point (IP1dB)is around -12 dBm in W-band.
引用
收藏
页码：187 / 191
页数：5
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