Deposition and structural investigation of uniform AlN(100) films at wafer scale through RF magnetron sputtering

a-axis-oriented AlN(100) films are identified as promising candidates for surface acoustic wave devices owing to their high transversal-acoustic velocity. Achieving uniform films across a wafer scale is crucial for enhancing device performance and minimizing manufacturing costs. In this study, we employ radio-frequency magnetron sputtering to deposit AlN(100) films on 2-in Si(100) wafers. We further examine the influence of various process parameters on the nonuniformity of film thickness and structural properties, including crystallite size, microstrain, and dislocation density. The optimization of parameters leads to the selection of a gas flow ratio of N2:Ar = 4:7, a sputtering power of 160 W, and a substrate temperature of 350 degrees C. Under these optimized conditions, the AlN films not only demonstrate a preferred (100) orientation and remarkable crystallinity, as indicated by a full width at half maximum of the X-ray diffraction peak of just 0.03 degrees, but also achieve an optimal film thickness nonuniformity of 1.66 %. Our results offer valuable insights for the wafer-scale fabrication of AlN(100) films, potentially enhancing industrial production yields and reducing costs.