A high-power narrow-linewidth microlaser based on active-passive lithium niobate photonic integration

被引:4
|
作者
Yu, Shupeng [1 ,2 ,3 ]
Fang, Zhiwei [4 ,10 ]
Zhou, Yuan [1 ,2 ,3 ]
Zhu, Yiran [4 ]
Huang, Qinfen [4 ]
Ma, Yu [1 ,2 ,3 ]
Liu, Jian [4 ]
Zhang, Haisu [4 ]
Wang, Min [4 ,10 ]
Cheng, Ya [1 ,2 ,4 ,5 ,6 ,7 ,8 ,9 ,10 ]
机构
[1] Chinese Acad Sci, State Key Lab High Field Laser Phys, Shanghai 201800, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech SIOM, CAS Ctr Excellence Ultraintense Laser Sci, Shanghai 201800, Peoples R China
[3] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[4] East China Normal Univ, Sch Phys & Elect Sci, Extreme Optoelectromechan Lab XXL, Shanghai 200241, Peoples R China
[5] Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Shanxi, Peoples R China
[6] Shandong Normal Univ, Collaborat Innovat Ctr Light Manipulat & Applicat, Jinan 250358, Peoples R China
[7] Hefei Natl Lab, Hefei 230088, Peoples R China
[8] East China Normal Univ, Joint Res Ctr Light Manipulat Sci & Photon Integra, Shanghai 200241, Peoples R China
[9] East China Normal Univ, Shandong Normal Univ, Shanghai 200241, Peoples R China
[10] East China Normal Univ, Sch Phys & Elect Sci, Shanghai 200241, Peoples R China
来源
基金
中国国家自然科学基金;
关键词
Narrow-linewidth; FP resonator laser; Thin film lithium niobate; Sagnac loop reflectors; LASER ARRAYS;
D O I
10.1016/j.optlastec.2024.110927
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We demonstrate an on-chip integrated Fabry-Perot (FP) resonator laser with high output power and narrow linewidth. The laser chip is fabricated on monolithically integrated active (i.e., Er 3 + -doped) and passive (i.e., non-doped) thin film lithium niobate (TFLN) substrate in which the laser cavity is constructed with two Sagnac loop reflectors fabricated on the passive TFLN. The monolithically integrated FP resonator laser achieves an output power of 126.35 mu W and a linewidth of 47.5 kHz.
引用
收藏
页数:6
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