Interband cascade light-emitting diodes grown on silicon substrates using GaSb buffer layer

被引：1

作者：

Ince, Fatih F. ^{[1
]}

Frost, Mega ^{[1
]}

Shima, Darryl ^{[1
]}

Rotter, Thomas J. ^{[1
]}

Addamane, Sadhvikas ^{[2
]}

McCartney, Martha R. ^{[3
]}

Smith, David J. ^{[3
]}

Canedy, Chadwick L. ^{[4
]}

Tomasulo, Stephanie ^{[4
]}

Kim, Chul Soo ^{[4
]}

Bewley, William W. ^{[4
]}

Vurgaftman, Igor ^{[4
]}

Meyer, Jerry R. ^{[4
]}

Balakrishnan, Ganesh ^{[1
,5
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87108 USA

[2] Sandia Natl Labs, Ctr Integrated Nanotechnol, Albuquerque, NM 87108 USA

[3] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

[4] US Naval Res Lab, Washington, DC 20375 USA

[5] Univ New Mexico, Elect & Comp Engn, Albuquerque, NM 87108 USA

来源：

APPLIED PHYSICS LETTERS | 2024年 / 125卷 / 01期

关键词：

MOLECULAR-BEAM HETEROEPITAXY; PUMPED LASER OSCILLATION; MU-M REGION; EPITAXY;

D O I：

10.1063/5.0209740

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Interband cascade light-emitting diodes (ICLEDs) offer attractive advantages for infrared applications, which would greatly expand if high-quality growth on silicon substrates could be achieved. This work describes the formation of threading dislocations in ICLEDs grown monolithically on GaSb-on-Silicon wafers. The epitaxial growth is done in two stages: the GaSb-on-Silicon buffer is grown first, followed by the ICLED growth. The buffer growth involves the nucleation of a 10-nm-thick AlSb buffer layer on the silicon surface, followed by the GaSb growth. The AlSb nucleation layer promotes the formation of 90 degrees and 60 degrees interfacial misfit dislocations, resulting in a highly planar morphology for subsequent GaSb growth that is almost 100% relaxed. The resulting GaSb buffer for growth of the ICLED has a threading dislocation density of similar to 10(7)/cm(2) after similar to 3 mu m of growth. The fabricated LEDs showed variations in device performance, with some devices demonstrating comparable light-current-voltage curves to those for devices grown on GaSb substrates, while other devices showed somewhat reduced relative performance. Cross-sectional transmission electron microscopy observations of the inferior diodes indicated that the multiplication of threading dislocations in the active region had most likely caused the increased leakage current and lower output power. Enhanced defect filter layers on the GaSb/Si substrates should provide more consistent diode performance and a viable future growth approach for antimonide-based ICLEDs and other infrared devices.

引用

页数：6