Exploring the AC conductivity and dielectric properties of PVA films doped with Erythrosin B

被引:0
作者
Ali, H. A. M. [1 ]
El-Zaidia, E. F. M. [2 ]
Darwish, A. A. A. [2 ]
Farid, A. S. [1 ]
机构
[1] Ain Shams Univ, Fac Educ, Phys Dept, Cairo 11757, Egypt
[2] Univ Tabuk, Fac Sci, Dept Phys, Adv Mat Res Lab, Tabuk 71491, Saudi Arabia
关键词
Erythrosin B; PVA; dielectric; AC conductivity; NANO COMPOSITE PVA-TIO2; ELECTRICAL-CONDUCTIVITY; IMPEDANCE PROPERTIES; THIN-FILMS; RELAXATION BEHAVIOR; SPECTROSCOPY; MECHANISM; MODULUS;
D O I
10.1088/1402-4896/ad5ec8
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Erythrosin B (EB) doped in PVA film was processed utilizing the casting procedure, and the structure was investigated via the Fourier Transformation infrared technique (FTIR). FTIR analysis presented a strong formation of intermolecular hydrogen bonds among PVA and EB hydroxyl groups (OH). Characteristic temperature and frequency variation of dielectric behavior and AC electrical conductivity for films of PVA doped with Erythrosin B were analyzed at (293-383 K) temperature and (102-106 Hz) frequency. The AC conductivity dependency indicates that the predominant conduction mechanism in PVA doped with Erythrosin B films follows the correlated barrier hopping (CBH) model. The charge carriers' hopping involving localized states causes a relaxation process. Estimates were made for the AC conductivity activation energy and the conductivity relaxation energy. Frequency and temperature affect the dielectric constant (epsilon ') and the dielectric loss (epsilon ''). The complex impedance spectrum (Z ' versus Z '') showed single semicircular arcs with a decreased radius with increasing temperature. The relaxation peaks in the electric modulus representation are clearly defined, and the relaxation period has been calculated.
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页数:10
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