Comparative study of RF sputtered Fe2O3- and Fe3O4-doped indium saving indium tin oxide thin films

被引：0

作者：

Petrovska, Svitlana ^{[1
]}

Sergiienko, Ruslan ^{[2
]}

Ilkiv, Bogdan ^{[1
]}

Nakamura, Takashi ^{[3
]}

Ohtsuka, Makoto ^{[3
]}

机构：

[1] Natl Acad Sci Ukraine, Frantsevich Inst Problems Mat Sci, 3 Omeliana Pritsaka Str, UA-03142 Kiev, Ukraine

[2] Natl Acad Sci Ukraine, Physicotechnol Inst Met & Alloys, Kiev, Ukraine

[3] Tohoku Univ, IMRAM, Sendai 9808577, Japan

来源：

MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2024年 / 768卷 / 08期

关键词：

Electrical properties; iron-doped indium tin oxide; optical properties; radio frequency sputtering; surface roughness; ELECTRICAL-PROPERTIES; ITO FILMS; TRANSPARENT;

D O I：

10.1080/15421406.2024.2348192

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In present work the properties of iron-doped indium tin oxide (ITO) films with reduced to 50 mass% indium oxide content prepared by co-sputtering of ITO and Fe2O3 targets and ITO and Fe3O4 targets in mixed argon-oxygen atmosphere were studied by various methods. The influence of different working gas flow rates, RF power of iron oxide targets, type of doping oxide and heat treatment temperatures on the electrical, optical, structural, and morphological properties of the films was characterized by means of four-point probe method, ultraviolet-visible (UV-Vis) spectroscopy, X-ray diffraction and atomic force microscopy.

引用

页码：128 / 138

页数：11

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