Tailored buried layer passivation toward high-efficiency carbon based all-inorganic CsPbBr3 perovskite solar cell

被引:19
作者
Zhou, Long [1 ,3 ]
Sui, Mengjia [1 ]
Zhang, Jiaojiao [3 ]
Cao, Ke [1 ]
Wang, Hongqiang [2 ]
Yuan, Haidong [3 ]
Lin, Zhenhua [3 ]
Zhang, Jincheng [3 ]
Li, Peixian [1 ]
Hao, Yue [3 ]
Chang, Jingjing [3 ]
机构
[1] Xidian Univ, Sch Adv Mat & Nanotechnol, Shaanxi Key Lab High Orbits Electron Mat & Protect, 2 South Taibai Rd, Xian 710071, Peoples R China
[2] Northwestern Polytech Univ, Ctr Nano Energy Mat, Sch Mat Sci & Engn, State Key Lab Solidificat Proc, Xian 710072, Peoples R China
[3] Xidian Univ, Sch Microelect, Natl Key Lab Wide Bandgap Semicond Devices & Integ, 2 South Taibai Rd, Xian 710071, Peoples R China
基金
中国国家自然科学基金;
关键词
CsPbBr3; perovskites; Carbon-based; High Voc; CsCl doping; TEMPERATURE;
D O I
10.1016/j.cej.2024.154043
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
The inferior crystallinity and surface defects have significantly hampered the efficiency and open-circuit voltage (Voc) of CsPbBr3 perovskite solar cells (PSCs). Herein, we present a buried layer passivated technique by doping CsCl into the SnO2 precursor. The Cl-terminated SnO2 film could effectively order the distorted PbBr2 octahedron, resulting in the improved CsPbBr3 film and the better energy alignment. Arising from the better energy alignment, the CsCl-SnO2 nanocomposites repair the defective interface and suppress defects existed at grain boundaries. Significantly, buried layer passivation could relieve lattice strain and promote grain growth due to the strong interface electronic coupling between Pb-Cl atoms. Finally, the champion devices achieve an efficiency of 11.16 % with a record Vocof 1.68 V, coupled with excellent storage, thermal and operational stability.
引用
收藏
页数:8
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