Research on the Common Mode EMI Suppression Method for SiC Traction Converters

被引：0

作者：

Liu, Kan ^{[1
]}

Liu, Donghui ^{[1
]}

Wang, Yongxiang ^{[1
]}

Meng, Fanyang ^{[2
]}

Liu, Jianqiang ^{[2
]}

机构：

[1] China Acad Rail Way Sci Corp, State Key Lab Tract & Control Syst EMU & Locomot, Beijing, Peoples R China

[2] Beijing Jiaotong Univ, Sch Elect Engn, Beijing, Peoples R China

来源：

PROCEEDINGS OF THE 6TH INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING AND INFORMATION TECHNOLOGIES FOR RAIL TRANSPORTATION, EITRT 2023: ENERGY TRACTION TECHNOLOGY OF RAIL TRANSPORTATION | 2024年 / 1135卷

关键词：

Silicon carbide; Traction converter; Common-mode electromagnetic interference; Nanocrystalline choke; Suppression method;

D O I：

10.1007/978-981-99-9307-9_11

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The SiC traction converter possesses the advantages of low power loss and high operating frequency. However, the faster switching speed and higher switching frequency of SiC devices also lead to more severe electromagnetic interference (EMI) issues in traction drive systems. This paper proposes a common-mode (CM) EMI suppression method specifically for SiC traction converters. Firstly, the CM conducted interference paths in the traction drive system are studied, and an equivalent circuit modeling method for CM EMI applicable to SiC traction converters is presented. The influence of applying SiC devices on the magnitude of CM EMI in the traction drive system is analyzed. Furthermore, a CM EMI suppression measure is proposed by introducing nanocrystalline chokes at the input and output ports of the SiC traction converter, along with a design method for the parameters of the nanocrystalline choke. Finally, a low-power experimental platform for the SiC traction converter is established, and experimental verification is conducted. The results demonstrate that the proposed suppression method effectively suppresses CM currents in the system.

引用

页码：99 / 107

页数：9

共 32 条

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Kanale, Ajit
Baliga, B. Jayant
2019 IEEE 7TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA 2019), 2019, : 53 - 58
[32] Comparison of Current Suppression Methods to Enhance Short Circuit Capability of 1.2 kV SiC Power MOSFETs: A New Approach using a Series-connected, Gate-Source-Shorted Si Depletion-Mode MOSFET vs Reduced Gate Bias Operation
Kanale, Ajit
Baliga, B. Jayant
45TH ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY (IECON 2019), 2019, : 5114 - 5119

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