A 0.011% V LS and-76-dB PSRR Self-Biased CMOS Voltage Reference With Quasi Self-Cascode Current Mirror

被引:4
|
作者
Yu, Kai [1 ]
Chen, Jiyang [2 ]
Li, Sizhen [1 ]
Huang, Mo [3 ]
机构
[1] Guangdong Univ Technol, Sch Integrated Circuits, Guangzhou 510006, Peoples R China
[2] Guangdong Univ Technol, Sch Informat Engn, Guangzhou 510006, Peoples R China
[3] Univ Macau, State Key Lab Analog & Mixed Signal VLSI, Fac Sci & Technol, Dept Elect & Comp Engn,Inst Microelect, Macau, Peoples R China
关键词
CMOS voltage reference; line sensitivity; power supply rejection ratio; quasi self-cascode current mirror; self-biased; PPM/DEGREES-C; PICOWATT;
D O I
10.1109/TCSII.2023.3318372
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This brief proposes a nano -watt self -biased CMOS voltage reference (SBCVR) with a quasi self-cascode current mirror (QSCCM) for better line sensitivity (LS) and power supply rejection ratio (PSRR). A self-cascode MOSFET (SCM) and a cascode structure are combined as the QSCCM to reduce the variations of bias current (I-B) through the QSCCM, comparing to conventional ones. Then, the I-B is fed into an active load to acquire a more stable reference voltage (VREF) against the supply voltage (V-DD) without using any additional native devices, amplifiers, pre -regulation circuits, and DIBL compensation circuits. The proposed SBCVR with the QSCCM is fabricated in a standard 0.18 mu m CMOS process, while 22 chip samples are measured. The results show that the average LS is 0.011%/V when the V-DD varies from 0.8 V to 1.8 V. The average PSRR are -76dB, -53 dB, and -59 dB at 10Hz, 1kHz, and 1MHz respectively. Moreover, it can produce a V-REF of 293 mV and consume a supply current of 1.95 nA (V-DD=1V) at 27 degrees C. The average temperature coefficient (TC) is 66.1 ppm/degrees C without trimming in the temperature range from -40 degrees C to 85 degrees C, while the total area is only 0.004 mm(2).
引用
收藏
页码:1052 / 1056
页数:5
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