Electrically Tunable Ideality Factor and Series Resistance of Gate-Controlled Graphene/Pentacene Schottky Junctions

Gate-tunable Schottky barrier diodes find many applications in logic transistors, photodiodes, and sensors. In this work, the electrical properties of Schottky barrier diodes with graphene/pentacene junctions and additional gates were investigated in detail. The results of modeling equations that considered the ideality factor, series resistance, and effective barrier-height according to the gate bias (Vg) were in good agreement with the experimental results. In addition, the dominant conduction mechanism when the effective barrier-height was controlled by Vg is discussed from the perspective of the temperature-dependent currents in Schottky barrier diodes. This work provides critical information that aids our understanding of gated Schottky diodes with graphene/pentacene junctions, increasing the possible practical applications thereof.