InP-based Optical Devices Integrated on Silicon Photonic Circuits

被引:0
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作者
Okimoto, Takuya [1 ,2 ,3 ]
Fujiwara, Naoki [1 ,2 ,3 ]
Inoue, Naoko [1 ,2 ,3 ]
Hiratani, Takuo [1 ,2 ,3 ]
Kikuchi, Takehiko [1 ,2 ,3 ]
Mitarai, Takuya [1 ,2 ,3 ]
Kurokawa, Munetaka [1 ,2 ]
Tanaka, Hajime [1 ,2 ,3 ]
Fujikata, Hidenari [1 ,2 ]
Watanabe, Tohma [1 ,2 ]
Nitta, Toshiyuki [1 ,2 ,3 ]
Nishiyama, Nobuhiko [1 ,3 ]
Yagi, Hideki [1 ,2 ,3 ]
机构
[1] PETRA, Sumitomo Edogawabashi Ekimae Bldg 7F, Tokyo 1120014, Japan
[2] Sumitomo Elect Ind Ltd, Transmiss Devices Lab, 1 Taya Cho,Sakae Ku, Yokohama, Kanagawa 2448588, Japan
[3] Tokyo Inst Technol, Dept Elect & Elect Engn, 2-12-1 O Okayama,Meguro Ku, Tokyo 1528550, Japan
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We review our III-V/Si hybrid integration platform using chip-on-wafer direct bonding technique and the performance of hybrid lasers with InP-based gain regions on Si photonic circuits. (c) 2024 The Authors
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页数:3
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