Characteristics of highly sensitive hydrogen gas sensor based on Pt-SiO2/Si microring resonator

被引：0

作者：

Igarashi, Junpei ^{[1
]}

Okazaki, Shinji ^{[1
]}

Nishijima, Yoshiaki ^{[1
]}

Higo, Akio ^{[2
]}

Arakawa, Taro ^{[1
]}

机构：

[1] Yokohama Natl Univ, Grad Sch Engn, Yokohama, Kanagawa 2408501, Japan

[2] Univ Tokyo, Sch Engn, Syst Design Lab, Tokyo 1130032, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2024年 / 63卷 / 05期

关键词：

hydrogen; sensor; microring resonator; Si photonics; Pt-SiO2;

D O I：

10.35848/1347-4065/ad4040

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A hydrogen gas sensor based on a silicon microring resonator (MRR) with a Pt-SiO2 thin film as a hydrogen-sensitive film is proposed and investigated to realize a high-sensitivity hydrogen sensor. The sensor detects hydrogen on the basis of the resonant wavelength shift caused by the reaction heat generated in the Pt-SiO2 film. In the hydrogen exposure measurement, resonant wavelength shifts of approximately 5.0 and 2.4 nm were observed at hydrogen concentrations of 4.0 and 0.4 vol%, respectively, showing the high sensitivity of the proposed sensor. In addition, an MRR sensor with an upper Al2O3 cladding layer is proposed and its higher sensitivity is theoretically demonstrated.

引用

页数：5

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