SnS2 memtransistor-based Lorenz chaotic system for true random number generation

被引：2
作者：
Rehman, Shania [1 ]
Kim, Moon-Seok [2 ]
Khan, Muhammad Farooq [3 ]
Kim, Sungho [4 ]
机构：
[1] Sejong Univ, Dept Semicond Syst Engn, Seoul 05006, South Korea
[2] Hanbat Natl Univ, Dept Semicond Syst Engn, Daejeon 31538, South Korea
[3] Sejong Univ, Dept Elect Engn, Seoul 05006, South Korea
[4] Ewha Womans Univ, Dept Elect & Elect Engn, Seoul 03760, South Korea
来源：
NANO ENERGY | 2024年 / 127卷
基金：
新加坡国家研究基金会;
关键词：
Memtransistor; Tin disulfide; Interface trap; Lorenz system; True random number generator; SEQUENCE GENERATOR; INTERNET; THINGS;
D O I：
10.1016/j.nanoen.2024.109764
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
As the Internet of Things (IoT) landscape expands, the need for robust and energy -efficient hardware security has increased. In this study, we demonstrate a novel true random number generation (TRNG) system that combines a tin disulfide (SnS 2 ) nanosheet-based memtransistor with the Lorenz chaotic system. This synergy leverages the intrinsic stochasticity of electron trapping at the SnS 2 interfaces and the energy efficiency of the Lorenz chaotic system realized by an analog circuit. In addition, we provide a comprehensive evaluation of the energy consumption of the entire TRNG system based on direct measurements of the supply current. Remarkably, our TRNG achieves an energy consumption of 4.3 mu J/bit with a throughput of 10 kbit/s.
引用
收藏
页数：9
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共 49 条
  • [41] SnS2/SnS p-n heterojunctions with an accumulation layer for ultrasensitive room-temperature NO2 detection
    Sun, Quan
    Wang, Jiaxin
    Hao, Juanyuan
    Zheng, Shengliang
    Wan, Peng
    Wang, Tingting
    Fang, Haitao
    Wang, You
    [J]. NANOSCALE, 2019, 11 (29) : 13741 - 13749
  • [42] True random number generator with a metastability-based quality control
    Tokunaga, Carlos
    Blaauw, David
    Mudge, Trevor
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2008, 43 (01) : 78 - 85
  • [43] Two-dimensional devices and integration towards the silicon lines
    Wang, Shuiyuan
    Liu, Xiaoxian
    Xu, Mingsheng
    Liu, Liwei
    Yang, Deren
    Zhou, Peng
    [J]. NATURE MATERIALS, 2022, 21 (11) : 1225 - 1239
  • [44] A 0.18-μm CMOS high-data-rate true random bit generator through ΔΣ modulation of chaotic jerk circuit signals
    Wannaboon, Chatchai
    Tachibana, Masayoshi
    San-Um, Wimol
    [J]. CHAOS, 2018, 28 (06)
  • [45] Advanced Data Encryption using 2D Materials
    Wen, Chao
    Li, Xuehua
    Zanotti, Tommaso
    Puglisi, Francesco Maria
    Shi, Yuanyuan
    Saiz, Fernan
    Antidormi, Aleandro
    Roche, Stephan
    Zheng, Wenwen
    Liang, Xianhu
    Hu, Jiaxin
    Duhm, Steffen
    Roldan, Juan B.
    Wu, Tianru
    Chen, Victoria
    Pop, Eric
    Garrido, Blas
    Zhu, Kaichen
    Hui, Fei
    Lanza, Mario
    [J]. ADVANCED MATERIALS, 2021, 33 (27)
  • [46] A True Random Number Generator Using Threshold-Switching-Based Memristors in an Efficient Circuit Design
    Woo, Kyung Seok
    Wang, Yongmin
    Kim, Jihun
    Kim, Yumin
    Kwon, Young Jae
    Yoon, Jung Ho
    Kim, Woohyun
    Hwang, Cheol Seong
    [J]. ADVANCED ELECTRONIC MATERIALS, 2019, 5 (02):
  • [47] Cryptography based on chaotic systems
    Yang, T
    Wu, CW
    Chua, LO
    [J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS, 1997, 44 (05): : 469 - 472
  • [48] A Survey on True Random Number Generators Based on Chaos
    Yu, Fei
    Li, Lixiang
    Tang, Qiang
    Cai, Shuo
    Song, Yun
    Xu, Quan
    [J]. DISCRETE DYNAMICS IN NATURE AND SOCIETY, 2019, 2019
  • [49] High-speed true random number generation based on paired memristors for security electronics
    Zhang, Teng
    Yin, Minghui
    Xu, Changmin
    Lu, Xiayan
    Sun, Xinhao
    Yang, Yuchao
    Huang, Ru
    [J]. NANOTECHNOLOGY, 2017, 28 (45)
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