SnS2 memtransistor-based Lorenz chaotic system for true random number generation

被引:2
作者
Rehman, Shania [1 ]
Kim, Moon-Seok [2 ]
Khan, Muhammad Farooq [3 ]
Kim, Sungho [4 ]
机构
[1] Sejong Univ, Dept Semicond Syst Engn, Seoul 05006, South Korea
[2] Hanbat Natl Univ, Dept Semicond Syst Engn, Daejeon 31538, South Korea
[3] Sejong Univ, Dept Elect Engn, Seoul 05006, South Korea
[4] Ewha Womans Univ, Dept Elect & Elect Engn, Seoul 03760, South Korea
基金
新加坡国家研究基金会;
关键词
Memtransistor; Tin disulfide; Interface trap; Lorenz system; True random number generator; SEQUENCE GENERATOR; INTERNET; THINGS;
D O I
10.1016/j.nanoen.2024.109764
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
As the Internet of Things (IoT) landscape expands, the need for robust and energy -efficient hardware security has increased. In this study, we demonstrate a novel true random number generation (TRNG) system that combines a tin disulfide (SnS 2 ) nanosheet-based memtransistor with the Lorenz chaotic system. This synergy leverages the intrinsic stochasticity of electron trapping at the SnS 2 interfaces and the energy efficiency of the Lorenz chaotic system realized by an analog circuit. In addition, we provide a comprehensive evaluation of the energy consumption of the entire TRNG system based on direct measurements of the supply current. Remarkably, our TRNG achieves an energy consumption of 4.3 mu J/bit with a throughput of 10 kbit/s.
引用
收藏
页数:9
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