D-Band Absorber Comprising Tantalum Nitride-Based Resistively-Loaded High Impedance Surfaces

被引：2

作者：

Bilal, Rana Muhammad Hasan ^{[1
]}

Borgese, Michele ^{[2
]}

Genovesi, Simone ^{[1
]}

Manara, Giuliano ^{[1
]}

Costa, Filippo ^{[1
]}

机构：

[1] Univ Pisa, Dept Informat Engn, I-56125 Pisa, Italy

[2] SIAE Microelettron, Dept Res & Dev, Cologno Monzese, Italy

来源：

2024 18TH EUROPEAN CONFERENCE ON ANTENNAS AND PROPAGATION, EUCAP | 2024年

关键词：

D-band; resistive surfaces; wideband; absorber; tantalum nitride; FREQUENCY-SELECTIVE SURFACES; DESIGN; MODEL;

D O I：

10.23919/EuCAP60739.2024.10501722

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes a D-band absorber that employs periodic resistive surface made of Tantalum Nitride (Ta2N) deposited on a gold-backed alumina dielectric substrate. The top resistive surface consists of square loop-based unit cells and demonstrates an absorption rate of over 90% across the frequency range from 100 GHz to 166 GHz. The performance of the designed absorber is evaluated through a full-wave simulation method and has been verified using an equivalent circuit model approach. The proposed absorber could be useful in the sub-THz band for various applications, including enhancing MIMO antenna isolation, reducing Electromagnetic Interference (EMI), and integration into other microwave circuits.

引用

页数：5

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