Study of Wafer Arcing Defects on PECVD Low Deposition Rate TEOS Oxide Thin Film

被引：0

作者：

Wang, Minrui ^{[1
]}

Low, Irene ^{[1
]}

Lee, Y. B. ^{[1
]}

Schmitt, Joseph ^{[1
]}

机构：

[1] GLOBALFOUNDRIES, AME CVD, Malta, NY 12020 USA

来源：

2024 35TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE, ASMC | 2024年

关键词：

wafer arcing; TEOS; PECVD; thin film; deposition rate;

D O I：

10.1109/ASMC61125.2024.10545370

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, we have investigated wafer arcing defects on low deposition rate oxide thin film using tetraethyl-orthosilicate (TEOS) by Plasma Enhanced Chemical Vapor Deposition (PECVD). During the experiments, we considered process parameters such as the O2/TEOS gas flow ratio, RF power, and hardware configurations. A proposed mechanism for the formation of wafer arcing defects has been put forward. A process condition was found to eliminate wafer arcing defects while maintaining thin film properties.

引用

页数：4

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