Study of Wafer Arcing Defects on PECVD Low Deposition Rate TEOS Oxide Thin Film

被引：0
|
作者：
Wang, Minrui [1 ]
Low, Irene [1 ]
Lee, Y. B. [1 ]
Schmitt, Joseph [1 ]
机构：
[1] GLOBALFOUNDRIES, AME CVD, Malta, NY 12020 USA
来源：
2024 35TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE, ASMC | 2024年
关键词：
wafer arcing; TEOS; PECVD; thin film; deposition rate;
D O I：
10.1109/ASMC61125.2024.10545370
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, we have investigated wafer arcing defects on low deposition rate oxide thin film using tetraethyl-orthosilicate (TEOS) by Plasma Enhanced Chemical Vapor Deposition (PECVD). During the experiments, we considered process parameters such as the O2/TEOS gas flow ratio, RF power, and hardware configurations. A proposed mechanism for the formation of wafer arcing defects has been put forward. A process condition was found to eliminate wafer arcing defects while maintaining thin film properties.
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页数：4
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