Purification and preparation of pure SiC with silicon cutting waste

被引：1

作者：

Jiang, Shengnan ^{[1
]}

Wang, Yilong ^{[1
]}

Zhang, Baojie ^{[1
]}

Xu, Xiaoxu ^{[1
]}

Gao, Shuaibo ^{[2
]}

机构：

[1] Liaodong Univ, Sch Chem Engn & Machinery, Dandong 118003, Peoples R China

[2] Wuhan Univ, Sch Resource & Environm Sci, Wuhan 430072, Peoples R China

来源：

JOURNAL OF ENVIRONMENTAL MANAGEMENT | 2024年 / 363卷

基金：

中国博士后科学基金;

关键词：

Silicon carbide; Silicon cutting waste; Ultrasonic leaching; Iron leaching; Kinetics analysis; RECOVERY; REMOVAL; FLUIDS; KERF;

D O I：

10.1016/j.jenvman.2024.121364

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

Recycling silicon cutting waste (SCW) plays a pivotal role in reducing environmental impact and enhancing resource efficiency within the semiconductor industry. Herein SCW was utilized to prepare SiC and ultrasoundassisted leaching was investigated to purify the obtained SiC and the leaching factors were optimized. The mixed acids of HF/H2SO4 works efficiently on the removal of Fe and SiO2 due to that HF can react with SiO2 and Si and then expose the Fe to H+. The assistance of ultrasound can greatly improve the leaching of Fe, accelerate the leaching rate, and lower the leaching temperature. The optimal leaching conditions are HF-H2SO4 ratio of 1:3, acid concentration of 3 mol/L, temperature of 50 degrees C, ultrasonic frequency of 45 kHz and power of 210 W, and stirring speed of 300 rpm. The optimal leaching ratio of Fe is 99.38%. Kinetic analysis shows that the leaching process fits the chemical reaction-controlled model.

引用

页数：8

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