Laser lift-off technique for applications in III-N microelectronics: A review

被引：1
作者：
Chowdhury, Sabuj [1 ]
Alam, Sabrina [1 ]
Alam, Md Didarul [1 ]
Jui, Fahmida Sharmin [2 ]
机构：
[1] Univ Chittagong, Dept Elect & Elect Engn, Chittagong 4331, Bangladesh
[2] Southern Univ Bangladesh, Dept Elect & Commun Engn, Chittagong, Bangladesh
来源：
MICROELECTRONIC ENGINEERING | 2024年 / 290卷
关键词：
Laser lift-off; N; -polar; III -N epilayer; LED; Flexible electronics; HEMT; LIGHT-EMITTING-DIODES; GAN THIN-FILMS; FREESTANDING GAN; EXTRACTION EFFICIENCY; FACE GAN; SAPPHIRE; ENHANCEMENT; GROWTH; DENSITY; ARRAYS;
D O I：
10.1016/j.mee.2024.112198
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The development of flexible electronics, better heat dissipation capabilities, increased LED light extraction efficiency, and the implementation of inverted barrier N-polar high electron mobility transistor (HEMT) for power electronics are all made possible by adopting laser lift-off (LLO), a technology that enables the movement of discrete III-N elements onto any substrates which are otherwise not attainable. In this paper, we focus on evaluating the LLO mechanism, its application for III-N epilayers and devices, and assessing their structural and electronic characteristics to give an overview of the advancement in LLO technology for III-N microelectronics.
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页数：15
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