Hydrogen sulfide chemiresistive sensor based on swift heavy ion irradiated cerium-based metal-organic framework/graphene oxide composite

被引:0
作者
More, Mayuri S. [1 ]
Bodkhe, Gajanan A. [2 ]
Singh, Fouran [3 ]
Dole, Babasaheb N. [1 ]
Tsai, Meng-Lin [4 ]
Hianik, Tibor [5 ]
Shirsat, Mahendra D. [1 ]
机构
[1] Dr Babasaheb Ambedkar Marathwada Univ, RUSA Ctr Adv Sensor Technol, Dept Phys, Aurangabad 431004, MS, India
[2] Yeungnam Univ, Dept Food Sci & Technol, Gyongsan 38541, Gyeongsangbuk D, South Korea
[3] Inter Univ Accelerator Ctr IUAC, New Delhi 110067, India
[4] Natl Taiwan Univ Sci & Technol, Dept Mat Sci & Engn, Taipei 10607, Taiwan
[5] Comenius Univ, Fac Math Phys & Informat, Dept Nucl Phys & Biophys, Bratislava 84248, Slovakia
关键词
Gas sensor; Hydrogen sulfide; SHI irradiation; Chemiresistor; MOF; Graphene oxide; REDUCED GRAPHENE OXIDE; SENSING PERFORMANCE; GAS SENSORS; H2S;
D O I
10.1016/j.synthmet.2024.117622
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Herein, we report ultrahigh sensitive and selective hydrogen sulfide (H 2 S) chemiresistive sensor using SHI irradiated cerium -based metal - organic framework (MOF)/graphene oxide composite (Ce-BTC/GO). The solvothermal synthesized Ce-BTC/GO coated on an indium tin oxide (ITO) electrode, irradiated by the 100 MeV Au + ion at the fluence rate 5 x 10 10 ions/s, 5 x 10 11 ions/s and 5 x 10 12 ions/s has been tested for chemiresistive sensing of H 2 S. As irradiated, Ce-BTC/GO was multi -parametrically tested for XRD, FE -SEM, FTIR spectroscopy, Raman spectroscopy and I -V characteristics for its structural, morphological, spectroscopic and electrical characteristics. The result reveals that the irradiation treatment greatly affects the electric characteristics of the GO, achieving dramatic conductivity modulation in the presence of H 2 S gas, it also creates the surface sites for the H 2 S absorption and hence shows excellent real-time sensing performance below the maximum residue limit established by OSHA (Occupational Safety and Health Administration). SHI irradiated Ce-BTC/GO sensor also shows excellent response/recovery time, ultrahigh reproducibility, good repeatability and stability at room temperature. The sensor allows the detection of H 2 S with a sensitivity of 54.70% in a concentration range of 10 - 100 ppm with a limit of detection 10 ppm.
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页数:10
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