Optoelectronically controlled transistor and magnetoresistance effect in an antiferromagnetic graphene-based junction

被引:0
作者
Lue, Xiao-Long [1 ]
Hu, Ze-Han [1 ]
Hu, Zhen-Shu [1 ]
Hu, Jian-Ming [1 ]
Huang, Hui -Lin [1 ]
Qin, Yv-Nuo [1 ]
机构
[1] Guangxi Univ Sci & Technol, Coll Sci, Liuzhou 545006, Guangxi, Peoples R China
来源
MICRO AND NANOSTRUCTURES | 2024年 / 192卷
基金
中国国家自然科学基金;
关键词
D O I
10.1016/j.micrna.2024.207866
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We investigate the optoelectronic spin and spin -valley transports and magnetoresistance (MR) effect in a graphene-based junction. The results show that by modulating the direction of an electric field, the off state and the on state with fully spin -polarized currents can be realized for both parallel (P) and antiparallel (AP) magnetization configurations, because the spin -polarized directions between two antiferromagnetic (AFM) regions are opposite and consistent, respectively. Moreover, when the off -resonant circularly polarized (ORCP) light is further radiated on two AFM regions, pure spin current can be further switched into four types of fully spin -valley -polarized currents, which results in an optoelectronically controlled transistor. In particular, the conductances in the P and AP magnetization configurations are either equal or dramatically different, so the optically and electrically controlled MR effect is naturally formed that can be switched from 0 to 1. Our results suggest that graphene has a very promising potential for applications in spintronics and spin-valleytronics.
引用
收藏
页数:9
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