Optoelectronically controlled transistor and magnetoresistance effect in an antiferromagnetic graphene-based junction

被引：0

作者：

Lue, Xiao-Long ^{[1
]}

Hu, Ze-Han ^{[1
]}

Hu, Zhen-Shu ^{[1
]}

Hu, Jian-Ming ^{[1
]}

Huang, Hui -Lin ^{[1
]}

Qin, Yv-Nuo ^{[1
]}

机构：

[1] Guangxi Univ Sci & Technol, Coll Sci, Liuzhou 545006, Guangxi, Peoples R China

来源：

MICRO AND NANOSTRUCTURES | 2024年 / 192卷

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1016/j.micrna.2024.207866

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We investigate the optoelectronic spin and spin -valley transports and magnetoresistance (MR) effect in a graphene-based junction. The results show that by modulating the direction of an electric field, the off state and the on state with fully spin -polarized currents can be realized for both parallel (P) and antiparallel (AP) magnetization configurations, because the spin -polarized directions between two antiferromagnetic (AFM) regions are opposite and consistent, respectively. Moreover, when the off -resonant circularly polarized (ORCP) light is further radiated on two AFM regions, pure spin current can be further switched into four types of fully spin -valley -polarized currents, which results in an optoelectronically controlled transistor. In particular, the conductances in the P and AP magnetization configurations are either equal or dramatically different, so the optically and electrically controlled MR effect is naturally formed that can be switched from 0 to 1. Our results suggest that graphene has a very promising potential for applications in spintronics and spin-valleytronics.

引用

页数：9