Advances in SiC Technologies Address High-Voltage Electrification Design Challenges

被引:0
|
作者
Singh, Ranbir [1 ]
机构
[1] Indian Inst Technol, Delhi, India
来源
IEEE POWER ELECTRONICS MAGAZINE | 2024年 / 11卷 / 02期
关键词
Silicon carbide; Green products; High-voltage techniques; Switches; Silicon; Power electronics;
D O I
10.1109/MPEL.2024.3393168
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The move to a more-electrified society that is critical for global environmental sustainability is a key driver behind the rapid growth in deployment of silicon carbide (SiC) semiconductors. Capable of operating at higher voltages than their silicon counterparts, SiC devices in general offer superior efficiency, faster switching speeds and more robust operation-particularly at high temperatures. Now, devices at the 3.3 kV rating and above are becoming particularly important in higher-power applications. This article looks at the latest developments in GeneSiC technology, and the benefits those bring to new and emerging high-voltage applications, and how such devices can be deployed.
引用
收藏
页码:39 / 45
页数:7
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