DAM SRAM CORE: An Efficient High-Speed and Low-Power CIM SRAM CORE Design for Feature Extraction Convolutional Layers in Binary Neural Networks

被引:0
作者
Zhao, Ruiyong [1 ,2 ]
Gong, Zhenghui [1 ]
Liu, Yulan [1 ,2 ]
Chen, Jing [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200031, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
关键词
in-memory computing; SRAM; self-stabilizing voltage; ultra-low power; COMPUTING-IN-MEMORY; OPERATION;
D O I
10.3390/mi15050617
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
This article proposes a novel design for an in-memory computing SRAM, the DAM SRAM CORE, which integrates storage and computational functionality within a unified 11T SRAM cell and enables the performance of large-scale parallel Multiply-Accumulate (MAC) operations within the SRAM array. This design not only improves the area efficiency of the individual cells but also realizes a compact layout. A key highlight of this design is its employment of a dynamic aXNOR-based computation mode, which significantly reduces the consumption of both dynamic and static power during the computational process within the array. Additionally, the design innovatively incorporates a self-stabilizing voltage gradient quantization circuit, which enhances the computational accuracy of the overall system. The 64 x 64 bit DAM SRAM CORE in-memory computing core was fabricated using the 55 nm CMOS logic process and validated via simulations. The experimental results show that this core can deliver 5-bit output results with 1-bit input feature data and 1-bit weight data, while maintaining a static power consumption of 0.48 mW/mm2 and a computational power consumption of 11.367 mW/mm2. This showcases its excellent low-power characteristics. Furthermore, the core achieves a data throughput of 109.75 GOPS and exhibits an impressive energy efficiency of 21.95 TOPS/W, which robustly validate the effectiveness and advanced nature of the proposed in-memory computing core design.
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页数:15
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