A voltage-driven dual-mode MoSe2 photodetector with graphene as van der Waals contact

被引:0
作者
Xia, Zhonghui [1 ]
Wang, Sujuan [1 ]
Liu, Xueting [1 ]
Chen, Hongyu [1 ]
Su, Longxing [2 ,3 ]
机构
[1] South China Normal Univ, Sch Semicond Sci & Technol, Guangzhou 510631, Peoples R China
[2] Dongguan Univ Technol, Int Sch Microelect, Dongguan 523808, Peoples R China
[3] Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Peoples R China
基金
中国国家自然科学基金;
关键词
2D materials; van der Waals contact; photodetector; dual-mode; LARGE-SCALE SYNTHESIS; NANOSHEETS;
D O I
10.1088/1361-6463/ad4660
中图分类号
O59 [应用物理学];
学科分类号
摘要
Two-dimensional (2D) molybdenum selenide (MoSe2) is promising for use in the development of photodetectors for the harvesting of light from the ultraviolet to the near-infrared band, while high responsivity and fast response speed are difficult to simultaneously realize. Herein, we present a dual-mode MoSe2 photodetector with asymmetric electrodes, in which graphene and Cr metal are utilized as ohmic and Schottky contacts, respectively. The photodiode possesses fabulous Schottky characteristics, with a rectification ratio of similar to 250 and a low dark current of similar to 40 pA at -1 V. Under forward bias voltage of 1 V, the photodetector works in photoconductive mode with a slow response speed (decay time: similar to 5 min) but high responsivity (632 mA W-1). However, at reverse bias voltage, the photodetector acts as a photovoltaic-type device due to the Schottky barrier between Cr and MoSe2. Because of the reinforced built-in electric field, the photodetector driven at -5 V shows much faster response speeds (rise time: 1.96 ms; decay time: 755 mu s). This study provides a deep understanding of asymmetric structure MoSe2 photodetectors operated in two modes, which promotes a forward step toward 2D material optoelectronics.
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页数:10
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共 44 条
  • [1] Black Phosphorus/Molybdenum Diselenide Heterojunction-Based Photodetector
    Abderrahmane, Abdelkader
    Woo, Changlim
    Ko, Pil Ju
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2021, 50 (10) : 5713 - 5720
  • [2] Electrical contacts to two-dimensional semiconductors
    Allain, Adrien
    Kang, Jiahao
    Banerjee, Kaustav
    Kis, Andras
    [J]. NATURE MATERIALS, 2015, 14 (12) : 1195 - 1205
  • [3] A two-dimensional MoSe2/MoSi2N4 van der Waals heterostructure with high carrier mobility and diversified regulation of its electronic properties
    Cai, Xiaolin
    Zhang, Zhengwen
    Zhu, Yingying
    Lin, Long
    Yu, Weiyang
    Wang, Qin
    Yang, Xuefeng
    Jia, Xingtao
    Jia, Yu
    [J]. JOURNAL OF MATERIALS CHEMISTRY C, 2021, 9 (31) : 10073 - 10083
  • [4] Solution-processed ZnO/SnO2 bilayer ultraviolet phototransistor with high responsivity and fast photoresponse
    Choi, Hojoong
    Seo, Sehun
    Lee, Jong-Hoon
    Hong, Sang-Hyun
    Song, Jaesun
    Kim, Seungkyu
    Yim, Sang-Youp
    Lee, Kwanghee
    Park, Seong-Ju
    Lee, Sanghan
    [J]. JOURNAL OF MATERIALS CHEMISTRY C, 2018, 6 (22) : 6014 - 6022
  • [5] Recent progress in graphene-based electrodes for flexible batteries
    Dai, Chunlong
    Sun, Guoqiang
    Hu, Linyu
    Xiao, Yukun
    Zhang, Zhipan
    Qu, Liangti
    [J]. INFOMAT, 2020, 2 (03) : 509 - 526
  • [6] Ultrafast and Sensitive Self-Powered Photodetector Featuring Self-Limited Depletion Region and Fully Depleted Channel with van der Waals Contacts
    Dai, Mingjin
    Chen, Hongyu
    Wang, Fakun
    Long, Mingsheng
    Shang, Huiming
    Hu, Yunxia
    Li, Wen
    Ge, Chuanyang
    Zhang, Jia
    Zhai, Tianyou
    Fu, Yongqing
    Hu, PingAn
    [J]. ACS NANO, 2020, 14 (07) : 9098 - 9106
  • [7] NIR-UV Dual-Mode Photodetector with the Assistance of Machine-Learning Fabricated by Hybrid Laser Processing
    Deng, Shengfa
    Guo, Heng
    Yan, Jianfeng
    Zhu, Dezhi
    Li, Jiaqun
    Qiao, Ming
    Xie, Jiawang
    [J]. CHEMICAL ENGINEERING JOURNAL, 2023, 472
  • [8] Self-Driven Broadband Photodetectors Based on MoSe2/FePS3 van der Waals n-p Type-II Heterostructures
    Duan, Juanmei
    Chava, Phanish
    Ghorbani-Asl, Mahdi
    Lu, YangFan
    Erb, Denise
    Hu, Liang
    Echresh, Ahmad
    Rebohle, Lars
    Erbe, Artur
    Krasheninnikov, Arkady, V
    Helm, Manfred
    Zeng, Yu-Jia
    Zhou, Shengqiang
    Prucnal, Slawomir
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2022, 14 (09) : 11927 - 11936
  • [9] MoSe2-Cu2S Vertical p-n Nanoheterostructures for High-Performance Photodetectors
    Hassan, Md. Samim
    Bera, Susnata
    Gupta, Divya
    Ray, Samit K.
    Sapra, Sameer
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (04) : 4074 - 4083
  • [10] Two-dimensional transition metal dichalcogenides: interface and defect engineering
    Hu, Zehua
    Wu, Zhangting
    Han, Cheng
    He, Jun
    Ni, Zhenhua
    Chen, Wei
    [J]. CHEMICAL SOCIETY REVIEWS, 2018, 47 (09) : 3100 - 3128