Generation of holes from intra-valence band for enhanced oxidation potentials under visible light

被引:21
作者
Guo, Yan [1 ,2 ,3 ]
Ma, Weicong [4 ]
Chong, Meichi [1 ]
Tang, Chuyang Y. [2 ]
Zhou, Qixin [1 ]
Nan, Jun [3 ]
Zhu, Yongfa [1 ]
机构
[1] Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China
[2] Univ Hong Kong, Dept Civil Engn, Hong Kong 999077, Peoples R China
[3] Harbin Inst Technol, Sch Environm, Harbin 150090, Peoples R China
[4] Univ British Columbia, Dept Wood Sci, Vancouver, BC V6T 1Z4, Canada
基金
美国国家科学基金会;
关键词
CARRIER DYNAMICS; PHOTOCATALYST; EFFICIENCY;
D O I
10.1016/j.chempr.2024.01.022
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Breaking the trade-off between oxidation potential and spectral response range has been an enduring challenge in the field of photocatalysis. Here, we present a general approach to initiating intra-valence band (intra-VB) hole generation in organic conjugated molecular crystals under visible light irradiation. The electron -deficient precursor with the intrinsically empty side-VB is introduced by Fe 3+ , enabling electron transition from the intra-VB to the sideVB. By studying five typical conjugated photocatalysts, we demonstrate that holes with strong oxidation potentials (up to 3.85 V vs. RHE) are generated under visible light. For PTCDA molecular crystals, the holes from the intra-VB (HOCO-1 b ) couple with carbonyl groups, forming hole -coupled carbonyl sites (-C=O + ) and extending the hole lifetime by 241 times to 84.5 ns. Efficient hole transfer from -C=O + to reactants subsequently initiates oxidation reactions. The high-energy photogenerated holes exhibit scalable oxidation applicability, such as the degradation of organic pollutants in water under natural sunlight.
引用
收藏
页码:1252 / 1267
页数:17
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