Recess-free enhancement-mode AlGaN/GaN RF HEMTs on Si substrate

被引：0

作者：

Luan, Tiantian ^{[1
,2
]}

Huang, Sen ^{[1
,2
]}

Jing, Guanjun ^{[1
,2
]}

Fan, Jie ^{[1
,2
]}

Yin, Haibo ^{[1
,2
]}

Gao, Xinguo ^{[1
,2
]}

Zhang, Sheng ^{[1
,2
]}

Wei, Ke ^{[1
,2
]}

Li, Yankui ^{[1
,2
]}

Jiang, Qimeng ^{[1
,2
]}

Wang, Xinhua ^{[1
,2
]}

Hou, Bin ^{[3
]}

Yang, Ling ^{[3
]}

Ma, Xiaohua ^{[3
]}

Liu, Xinyu ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, High Frequency High Voltage Device & Integrated Ci, Inst Microelect, Beijing 100029, Peoples R China

[2] Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China

[3] Xidian Univ, Fac Integrated Circuits, Xian 710071, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2024年 / 45卷 / 06期

基金：

中国国家自然科学基金;

关键词：

AlGaN/GaN heterostructure; ultrathin-barrier; enhancement-mode; radio-frequency; power added efficiency; silicon substrate; ELECTRON-MOBILITY TRANSISTORS; ULTRATHIN-BARRIER; PERFORMANCE;

D O I：

10.1088/1674-4926/23120006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Enhancement-mode (E-mode) GaN-on-Si radio-frequency (RF) high-electron-mobility transistors (HEMTs) were fabricated on an ultrathin-barrier (UTB) AlGaN (<6 nm)/GaN heterostructure featuring a naturally depleted 2-D electron gas (2DEG) channel. The fabricated E-mode HEMTs exhibit a relatively high threshold voltage (V-TH) of +1.1 V with good uniformity. A maximum current/power gain cut-off frequency (f(T)/f(MAX)) of 31.3/99.6 GHz with a power added efficiency (PAE) of 52.47% and an output power density (P-out) of 1.0 W/mm at 3.5 GHz were achieved on the fabricated E-mode HEMTs with 1-<mu>m gate and Au-free ohmic contact.

引用

页数：6

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